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ST PD54008-E
| 제조업체 | |
| 제조사 품번 | PD54008-E |
| LCSC 번호 | C3289542 |
| 포장 | PowerSO-10 |
| 고객 번호 | |
| 주요 제원 | MOSFET N-CH 25V 5A PowerSO-10 |
| 데이터시트 | ST PD54008-E |
| RoHS 준수 | 2개 문서 이용 가능 |
| 대체 부품 | 4 |
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| 제조업체 | ST | |
| 포장 | PowerSO-10 | |
| Ciss-Input Capacitance | 91pF | |
| Operating Temperature | - | |
| Pd - Power Dissipation | 73W | |
| Reverse Transfer Capacitance (Crss) | 8.5pF | |
| Output Capacitance(Coss) | 68pF | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 5A | |
| RDS(on) | - | |
| Configuration | - | |
| Type | N-Channel | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| 제조업체 | ST | |
| 포장 | PowerSO-10 | |
| Ciss-Input Capacitance | 91pF | |
| Operating Temperature | - | |
| Pd - Power Dissipation | 73W | |
| Reverse Transfer Capacitance (Crss) | 8.5pF | |
| Output Capacitance(Coss) | 68pF | |
| Drain to Source Voltage | 25V |
| 타입 | 설명 | |
|---|---|---|
| Current - Continuous Drain(Id) | 5A | |
| RDS(on) | - | |
| Configuration | - | |
| Type | N-Channel | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
개요
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for portable radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.
주요 특징
- Excellent thermal stability
- Common source configuration
- P₀ₜ = 8 W with 11.5dB gain <500 MHz/7.5 V
- New RF plastic package
응용 분야
- commercial and industrial applications
- portable radio
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| 제조업체 | ST | |
| 포장 | PowerSO-10 | |
| Ciss-Input Capacitance | 91pF | |
| Operating Temperature | - | |
| Pd - Power Dissipation | 73W | |
| Reverse Transfer Capacitance (Crss) | 8.5pF | |
| Output Capacitance(Coss) | 68pF | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 5A | |
| RDS(on) | - | |
| Configuration | - | |
| Type | N-Channel | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| 제조업체 | ST | |
| 포장 | PowerSO-10 | |
| Ciss-Input Capacitance | 91pF | |
| Operating Temperature | - | |
| Pd - Power Dissipation | 73W | |
| Reverse Transfer Capacitance (Crss) | 8.5pF | |
| Output Capacitance(Coss) | 68pF | |
| Drain to Source Voltage | 25V |
| 타입 | 설명 | |
|---|---|---|
| Current - Continuous Drain(Id) | 5A | |
| RDS(on) | - | |
| Configuration | - | |
| Type | N-Channel | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
개요
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for portable radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.
주요 특징
- Excellent thermal stability
- Common source configuration
- P₀ₜ = 8 W with 11.5dB gain <500 MHz/7.5 V
- New RF plastic package
응용 분야
- commercial and industrial applications
- portable radio
C3289542 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |