Zdjęcia poglądowe
Modele EDAEasyEDA
onsemi FDC697P
| Producent | |
| Nr części prod. | FDC697P |
| Nr LCSC | C3282880 |
| Opak. | SUperSOT-6 |
| Numer Klienta | |
| Klucz. cechy | P-Channel, Current: -8A, Voltage: -20V |
| Karta Katalogowa | onsemi FDC697P |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | SUperSOT-6 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 544pF | |
| Current - Continuous Drain(Id) | 8A | |
| Pd - Power Dissipation | 2W | |
| RDS(on) | 35mΩ@1.8V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 55nC@4.5V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | SUperSOT-6 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 544pF |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 8A | |
| Pd - Power Dissipation | 2W | |
| RDS(on) | 35mΩ@1.8V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 55nC@4.5V | |
| Type | P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This P-channel 1.8V-specific MOSFET employs an advanced low-voltage power trench process, optimized for battery power management applications.
Funkcje
Tłumaczenie AI
- 8 A, -20 V; RDS(ON) = 20 mΩ at VGS = -4.5 V
- RDS(ON) = 25 mΩ at VGS = -2.5 V
- RDS(ON) = 35 mΩ at VGS = -1.8 V
- High-performance trench technology for ultra-low RDS(ON)
- Fast switching speed
- FLMP SuperSOT-6 package: enhanced thermal performance in industry-standard package footprint
Zastosowania
Tłumaczenie AI
- Battery Management - Load Switch - Battery Protection
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | SUperSOT-6 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 544pF | |
| Current - Continuous Drain(Id) | 8A | |
| Pd - Power Dissipation | 2W | |
| RDS(on) | 35mΩ@1.8V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 55nC@4.5V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | SUperSOT-6 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 544pF |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 8A | |
| Pd - Power Dissipation | 2W | |
| RDS(on) | 35mΩ@1.8V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 55nC@4.5V | |
| Type | P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This P-channel 1.8V-specific MOSFET employs an advanced low-voltage power trench process, optimized for battery power management applications.
Funkcje
Tłumaczenie AI
- 8 A, -20 V; RDS(ON) = 20 mΩ at VGS = -4.5 V
- RDS(ON) = 25 mΩ at VGS = -2.5 V
- RDS(ON) = 35 mΩ at VGS = -1.8 V
- High-performance trench technology for ultra-low RDS(ON)
- Fast switching speed
- FLMP SuperSOT-6 package: enhanced thermal performance in industry-standard package footprint
Zastosowania
Tłumaczenie AI
- Battery Management - Load Switch - Battery Protection
C3282880 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |