TI RFW2N06RLE
| Produttore | |
| Cod. Prod. | RFW2N06RLE |
| Cod. LCSC | C3277849 |
| Imballo | DIP-4 |
| Numero Cliente | |
| Attr. chiave | N-Channel, Current: 2A, Voltage: 60V |
| Scheda Tecnica | TI RFW2N06RLE |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | TI | |
| Imballo | DIP-4 | |
| Operating Temperature | - | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 175pF | |
| Current - Continuous Drain(Id) | 2A | |
| Ciss-Input Capacitance | 535pF | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss) | 32pF | |
| RDS(on) | 200mΩ@5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 20nC@5V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | TI | |
| Imballo | DIP-4 | |
| Operating Temperature | - | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 175pF | |
| Current - Continuous Drain(Id) | 2A | |
| Ciss-Input Capacitance | 535pF |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss) | 32pF | |
| RDS(on) | 200mΩ@5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 20nC@5V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
Descrizione
RFW2N06RLE (TA9861) is an N-channel logic-level ESD-protected power MOSFET fabricated using the MegaFET process. This process employs feature sizes approaching those of LSI circuits, enabling optimal utilization of silicon material and delivering outstanding performance. The RFW2N06RLE is designed for use with logic-level (5V) drive sources and is suitable for applications including programmable controllers, automotive switching, switching regulators, switching converters, motor and relay drivers, and bipolar transistor emitter switching. This performance is achieved through a special gate oxide design that provides full rated conductance at gate bias voltages of 3–5 volts, enabling true on/off power control directly from logic circuit supply voltages. The RFW2N06RLE is housed in a 4-pin, 6-lead DIP plastic package (similar to JEDEC outline TO-250).
Caratteristiche
- 2A, 60V
- rDS(on) = 0.160Ω
- UIS Rated Curve (Single Pulse)
- Optimized for 5V Gate Drive
- Directly Drivable by CMOS, NMOS, TTL Circuits
- Meets Automotive Drive Requirements
- Safe Operating Area Limited by Power Dissipation
- Nanosecond Switching Speed
- Linear Transfer Characteristics
- High Input Impedance
- Majority Carrier Device
- ESD Protection
Applicazioni
- Secondary-side synchronous rectifier
- High-side switch in POL DC/DC converters
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | TI | |
| Imballo | DIP-4 | |
| Operating Temperature | - | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 175pF | |
| Current - Continuous Drain(Id) | 2A | |
| Ciss-Input Capacitance | 535pF | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss) | 32pF | |
| RDS(on) | 200mΩ@5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 20nC@5V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | TI | |
| Imballo | DIP-4 | |
| Operating Temperature | - | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 175pF | |
| Current - Continuous Drain(Id) | 2A | |
| Ciss-Input Capacitance | 535pF |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss) | 32pF | |
| RDS(on) | 200mΩ@5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 20nC@5V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
Descrizione
RFW2N06RLE (TA9861) is an N-channel logic-level ESD-protected power MOSFET fabricated using the MegaFET process. This process employs feature sizes approaching those of LSI circuits, enabling optimal utilization of silicon material and delivering outstanding performance. The RFW2N06RLE is designed for use with logic-level (5V) drive sources and is suitable for applications including programmable controllers, automotive switching, switching regulators, switching converters, motor and relay drivers, and bipolar transistor emitter switching. This performance is achieved through a special gate oxide design that provides full rated conductance at gate bias voltages of 3–5 volts, enabling true on/off power control directly from logic circuit supply voltages. The RFW2N06RLE is housed in a 4-pin, 6-lead DIP plastic package (similar to JEDEC outline TO-250).
Caratteristiche
- 2A, 60V
- rDS(on) = 0.160Ω
- UIS Rated Curve (Single Pulse)
- Optimized for 5V Gate Drive
- Directly Drivable by CMOS, NMOS, TTL Circuits
- Meets Automotive Drive Requirements
- Safe Operating Area Limited by Power Dissipation
- Nanosecond Switching Speed
- Linear Transfer Characteristics
- High Input Impedance
- Majority Carrier Device
- ESD Protection
Applicazioni
- Secondary-side synchronous rectifier
- High-side switch in POL DC/DC converters
C3277849 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |