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Modelli EDAEasyEDA
ROHM RGTV80TS65DGC11
| Produttore | |
| Cod. Prod. | RGTV80TS65DGC11 |
| Cod. LCSC | C3193899 |
| Imballo | TO-247N |
| Numero Cliente | |
| Attr. chiave | 234W 78A 650V FS (Field Stop) TO-247N Single IGBTs RoHS |
| Scheda Tecnica | ROHM RGTV80TS65DGC11 |
| Conformità RoHS | 2 documenti disponibili |
| Parti alternative | 5 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | ROHM | |
| Imballo | TO-247N | |
| Td(off) | 113ns | |
| Pd - Power Dissipation | 234W | |
| Td(on) | 39ns | |
| Current - Collector(Ic) | 78A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 38pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.9V@15V,40A | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.5V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 101ns | |
| Switching Energy(Eoff) | 710uJ | |
| Turn-On Energy (Eon) | 1.02mJ | |
| Input Capacitance(Cies) | 2.37nF | |
| Output Capacitance(Coes) | 94pF | |
| Gate Charge(Qg) | 81nC |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | ROHM | |
| Imballo | TO-247N | |
| Td(off) | 113ns | |
| Pd - Power Dissipation | 234W | |
| Td(on) | 39ns | |
| Current - Collector(Ic) | 78A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 38pF | |
| IGBT Type | FS (Field Stop) |
| Tipo | Descrizione | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.9V@15V,40A | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.5V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 101ns | |
| Switching Energy(Eoff) | 710uJ | |
| Turn-On Energy (Eon) | 1.02mJ | |
| Input Capacitance(Cies) | 2.37nF | |
| Output Capacitance(Coes) | 94pF | |
| Gate Charge(Qg) | 81nC |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Low collector-emitter saturation voltage
- High-speed switching with low switching loss
- Short-circuit withstand time 2μs
- Built-in ultra-fast soft-recovery FRD
- Lead-free lead plating; RoHS compliant
Applicazioni
Traduzione AI
- Solar inverters
- Uninterruptible power supplies
- Welding equipment
- Induction heating
- Power factor correction
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Esaurito
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Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 3.034 | $ 3.03 |
| 200+ | $ 1.1741 | $ 234.82 |
| 450+ | $ 1.133 | $ 509.85 |
| 900+ | $ 1.1125 | $ 1001.25 |
Package Standard450/Full Tube | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | ROHM | |
| Imballo | TO-247N | |
| Td(off) | 113ns | |
| Pd - Power Dissipation | 234W | |
| Td(on) | 39ns | |
| Current - Collector(Ic) | 78A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 38pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.9V@15V,40A | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.5V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 101ns | |
| Switching Energy(Eoff) | 710uJ | |
| Turn-On Energy (Eon) | 1.02mJ | |
| Input Capacitance(Cies) | 2.37nF | |
| Output Capacitance(Coes) | 94pF | |
| Gate Charge(Qg) | 81nC |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | ROHM | |
| Imballo | TO-247N | |
| Td(off) | 113ns | |
| Pd - Power Dissipation | 234W | |
| Td(on) | 39ns | |
| Current - Collector(Ic) | 78A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 38pF | |
| IGBT Type | FS (Field Stop) |
| Tipo | Descrizione | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.9V@15V,40A | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.5V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 101ns | |
| Switching Energy(Eoff) | 710uJ | |
| Turn-On Energy (Eon) | 1.02mJ | |
| Input Capacitance(Cies) | 2.37nF | |
| Output Capacitance(Coes) | 94pF | |
| Gate Charge(Qg) | 81nC |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Low collector-emitter saturation voltage
- High-speed switching with low switching loss
- Short-circuit withstand time 2μs
- Built-in ultra-fast soft-recovery FRD
- Lead-free lead plating; RoHS compliant
Applicazioni
Traduzione AI
- Solar inverters
- Uninterruptible power supplies
- Welding equipment
- Induction heating
- Power factor correction
C3193899 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Parti alternative
| MPN | Produttore | Tipo alternativo | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|---|
| RGW80TS65DGC11 | ROHM | Simili | TO-247N | 5 | $ 16.2317 | ||
| RGS00TS65DHRC11 | ROHM | Simili | TO-247N | 26 | $ 5.4542 | ||
| MLG40T120FDL5 | Minos | Simili | TO-247 | 95 | $ 1.7249 | ||
| AFGY120T65SPD | onsemi | Simili | TO-247-3 | 1 | $ 12.9734 | ||
| SGT50T65SDM1P7 | Hangzhou Silan Microelectronics | Simili | TO-247-3L | 38 | $ 2.2249 |