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VBsemi Elec BUK542-60A-VB
| Producent | VBsemi ElecAsian Brands |
| Nr części prod. | BUK542-60A-VB |
| Nr LCSC | C29779088 |
| Opak. | TO-220AB |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 60V 20A TO-220AB |
| Karta Katalogowa | VBsemi Elec BUK542-60A-VB |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | TO-220AB | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 360pF | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 640pF | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss) | 79pF | |
| RDS(on) | 72mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 25nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | TO-220AB | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 360pF | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 640pF |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss) | 79pF | |
| RDS(on) | 72mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 25nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Dynamic dV/dt rating
- Fast switching
- Ease of paralleling
- Simple drive requirements
Zastosowania
Tłumaczenie AI
- Isolated DC/DC converter
- N-channel MOSFET
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | TO-220AB | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 360pF | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 640pF | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss) | 79pF | |
| RDS(on) | 72mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 25nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | TO-220AB | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 360pF | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 640pF |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss) | 79pF | |
| RDS(on) | 72mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 25nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Dynamic dV/dt rating
- Fast switching
- Ease of paralleling
- Simple drive requirements
Zastosowania
Tłumaczenie AI
- Isolated DC/DC converter
- N-channel MOSFET
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |