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ST PD55015-E
| Producent | |
| Nr części prod. | PD55015-E |
| Nr LCSC | C2971463 |
| Opak. | PowerSO-10RF |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 40V 5A PowerSO-10RF |
| Karta Katalogowa | ST PD55015-E |
| Zgodność z RoHS | 2 dokumentów dostępnych |
| Części alternatywne | 2 |
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Producent | ST | |
| Opak. | PowerSO-10RF | |
| Ciss-Input Capacitance | 89pF | |
| Operating Temperature | - | |
| Pd - Power Dissipation | 73W | |
| Reverse Transfer Capacitance (Crss) | 6.5pF | |
| Output Capacitance(Coss) | 60pF | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 5A | |
| RDS(on) | - | |
| Configuration | Common source | |
| Type | N-Channel | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Producent | ST | |
| Opak. | PowerSO-10RF | |
| Ciss-Input Capacitance | 89pF | |
| Operating Temperature | - | |
| Pd - Power Dissipation | 73W | |
| Reverse Transfer Capacitance (Crss) | 6.5pF | |
| Output Capacitance(Coss) | 60pF | |
| Drain to Source Voltage | 40V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 5A | |
| RDS(on) | - | |
| Configuration | Common source | |
| Type | N-Channel | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
Opis
The PD55015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The PD55015-E boasts the excellent gain, linearity and reliability thanks to ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, the PowerSO-10RF. The PD55015-E’s superior linearity performance makes it an ideal solution for car mobile radios. The PowerSO-10RF plastic package is designed for high reliability, and is the first JEDEC approved, high power SMD package from ST. It has been optimized for RF requirements and offers excellent RF performance and ease of assembly.
Funkcje
- Excellent thermal stability
- Common source configuration
- P_OUT = 15 W with 14 dB gain @ 500 MHz/12.5 V
Zastosowania
- Switching applications
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Producent | ST | |
| Opak. | PowerSO-10RF | |
| Ciss-Input Capacitance | 89pF | |
| Operating Temperature | - | |
| Pd - Power Dissipation | 73W | |
| Reverse Transfer Capacitance (Crss) | 6.5pF | |
| Output Capacitance(Coss) | 60pF | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 5A | |
| RDS(on) | - | |
| Configuration | Common source | |
| Type | N-Channel | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Producent | ST | |
| Opak. | PowerSO-10RF | |
| Ciss-Input Capacitance | 89pF | |
| Operating Temperature | - | |
| Pd - Power Dissipation | 73W | |
| Reverse Transfer Capacitance (Crss) | 6.5pF | |
| Output Capacitance(Coss) | 60pF | |
| Drain to Source Voltage | 40V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 5A | |
| RDS(on) | - | |
| Configuration | Common source | |
| Type | N-Channel | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
Opis
The PD55015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The PD55015-E boasts the excellent gain, linearity and reliability thanks to ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, the PowerSO-10RF. The PD55015-E’s superior linearity performance makes it an ideal solution for car mobile radios. The PowerSO-10RF plastic package is designed for high reliability, and is the first JEDEC approved, high power SMD package from ST. It has been optimized for RF requirements and offers excellent RF performance and ease of assembly.
Funkcje
- Excellent thermal stability
- Common source configuration
- P_OUT = 15 W with 14 dB gain @ 500 MHz/12.5 V
Zastosowania
- Switching applications
C2971463 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |