LCSC Electronics logoLCSC Electronics svg logo
Zaloguj
USD
GigaDevice Semicon Beijing GD25LQ64EWIGR product image
  • GD25LQ64EWIGR thumbnail 1
  • GD25LQ64EWIGR thumbnail 2
  • GD25LQ64EWIGR thumbnail 3
  • Rozmieszczenie wyprowadzeń
  • Footprint
Zdjęcia poglądowe

GigaDevice Semicon Beijing GD25LQ64EWIGR

Producent
Nr części prod.
GD25LQ64EWIGR
Nr LCSC
C2904426
Opak.
WSON-8-EP(5x6)
Numer Klienta
Klucz. cechy
64Mbit 1.65V~2V 133MHz SPI WSON-8-EP(5x6) Memory
Karta KatalogowaGigaDevice Semicon Beijing GD25LQ64EWIGR
Części alternatywne1
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni

Specyfikacje Produktu

Wszystko
TypOpis
KategoriaIntegrated Circuits (ICs)/Memory/Memory
ProducentGigaDevice Semicon Beijing
Opak.WSON-8-EP(5x6)
Operating Temperature-40℃~+85℃
FeaturesWrite enable latch;Hardware Write Protection;Software Write Protection;Absolute Write Protection
Memory Size64Mbit
Voltage - Supply1.65V~2V
Program / Erase Cycles100,000 cycles
Clock Frequency133MHz
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)150ms@(32KB);250ms@(64KB)
Write Cycle Time(tWC)-
Page Programming Time (Tpp)-
Standby Supply Current40uA
InterfaceSPI

Opis

Tłumaczenie AI

The GD25Q32E (32M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and the Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), I/O3 (HOLD#). The Dual I/O data is transferred with speed of 266Mbit/s, and the Quad I/O data is transferred with speed of 532Mbit/s.

Funkcje

Tłumaczenie AI
  • 32M-bit Serial Flash - 4096K-Byte - 256 Bytes per programmable page
  • Standard, Dual, Quad SPI - Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD# - Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD# - Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3
  • High Speed Clock Frequency - 133MHz for fast read - Dual I/O Data transfer up to 266Mbits/s - Quad I/O Data transfer up to 532Mbits/s
  • Software/Hardware Write Protection - Write protect all/portion of memory via software - Enable/Disable protection with WP# Pin - Top/Bottom Block protection
  • Endurance and Data Retention - Minimum 100,000 Program/Erase Cycles - 20-year data retention typical
  • Allows XiP (eXecute in Place) Operation - High speed Read reduce overall XiP instruction fetch time - Continuous Read with Wrap further reduce data latency to fill up SoC cache
  • Fast Program/Erase Speed - Page Program time: 0.5ms typical - Sector Erase time: 45ms typical - Block Erase time: 0.15s/0.25s typical - Chip Erase time: 12s typical
  • Flexible Architecture - Uniform Sector of 4K-Byte - Uniform Block of 32/64K-Byte
  • Low Power Consumption - 12μA typical standby current - 1μA typical deep power down current
  • Advanced Security Features - 128-bit Unique ID for each device - Serial Flash Discoverable parameters (SFDP) register - 3x1024-Byte Security Registers With OTP Locks
  • Single Power Supply Voltage - Full voltage range: 2.7-3.6V