GigaDevice Semicon Beijing GD25LQ64EWIGR
| Producent | GigaDevice Semicon BeijingAsian Brands |
| Nr części prod. | GD25LQ64EWIGR |
| Nr LCSC | C2904426 |
| Opak. | WSON-8-EP(5x6) |
| Numer Klienta | |
| Klucz. cechy | 64Mbit 1.65V~2V 133MHz SPI WSON-8-EP(5x6) Memory |
| Karta Katalogowa | GigaDevice Semicon Beijing GD25LQ64EWIGR |
| Części alternatywne | 1 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Integrated Circuits (ICs)/Memory/Memory | |
| Producent | GigaDevice Semicon Beijing | |
| Opak. | WSON-8-EP(5x6) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Write enable latch;Hardware Write Protection;Software Write Protection;Absolute Write Protection | |
| Memory Size | 64Mbit | |
| Voltage - Supply | 1.65V~2V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 133MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | 150ms@(32KB);250ms@(64KB) | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 40uA | |
| Interface | SPI |
| Typ | Opis | |
|---|---|---|
| Kategoria | Integrated Circuits (ICs)/Memory/Memory | |
| Producent | GigaDevice Semicon Beijing | |
| Opak. | WSON-8-EP(5x6) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Write enable latch;Hardware Write Protection;Software Write Protection;Absolute Write Protection | |
| Memory Size | 64Mbit | |
| Voltage - Supply | 1.65V~2V | |
| Program / Erase Cycles | 100,000 cycles |
| Typ | Opis | |
|---|---|---|
| Clock Frequency | 133MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | 150ms@(32KB);250ms@(64KB) | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 40uA | |
| Interface | SPI |
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Opis
Tłumaczenie AI
The GD25Q32E (32M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and the Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), I/O3 (HOLD#). The Dual I/O data is transferred with speed of 266Mbit/s, and the Quad I/O data is transferred with speed of 532Mbit/s.
Funkcje
Tłumaczenie AI
- 32M-bit Serial Flash - 4096K-Byte - 256 Bytes per programmable page
- Standard, Dual, Quad SPI - Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD# - Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD# - Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3
- High Speed Clock Frequency - 133MHz for fast read - Dual I/O Data transfer up to 266Mbits/s - Quad I/O Data transfer up to 532Mbits/s
- Software/Hardware Write Protection - Write protect all/portion of memory via software - Enable/Disable protection with WP# Pin - Top/Bottom Block protection
- Endurance and Data Retention - Minimum 100,000 Program/Erase Cycles - 20-year data retention typical
- Allows XiP (eXecute in Place) Operation - High speed Read reduce overall XiP instruction fetch time - Continuous Read with Wrap further reduce data latency to fill up SoC cache
- Fast Program/Erase Speed - Page Program time: 0.5ms typical - Sector Erase time: 45ms typical - Block Erase time: 0.15s/0.25s typical - Chip Erase time: 12s typical
- Flexible Architecture - Uniform Sector of 4K-Byte - Uniform Block of 32/64K-Byte
- Low Power Consumption - 12μA typical standby current - 1μA typical deep power down current
- Advanced Security Features - 128-bit Unique ID for each device - Serial Flash Discoverable parameters (SFDP) register - 3x1024-Byte Security Registers With OTP Locks
- Single Power Supply Voltage - Full voltage range: 2.7-3.6V
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Integrated Circuits (ICs)/Memory/Memory | |
| Producent | GigaDevice Semicon Beijing | |
| Opak. | WSON-8-EP(5x6) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Write enable latch;Hardware Write Protection;Software Write Protection;Absolute Write Protection | |
| Memory Size | 64Mbit | |
| Voltage - Supply | 1.65V~2V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 133MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | 150ms@(32KB);250ms@(64KB) | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 40uA | |
| Interface | SPI |
| Typ | Opis | |
|---|---|---|
| Kategoria | Integrated Circuits (ICs)/Memory/Memory | |
| Producent | GigaDevice Semicon Beijing | |
| Opak. | WSON-8-EP(5x6) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Write enable latch;Hardware Write Protection;Software Write Protection;Absolute Write Protection | |
| Memory Size | 64Mbit | |
| Voltage - Supply | 1.65V~2V | |
| Program / Erase Cycles | 100,000 cycles |
| Typ | Opis | |
|---|---|---|
| Clock Frequency | 133MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | 150ms@(32KB);250ms@(64KB) | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 40uA | |
| Interface | SPI |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
The GD25Q32E (32M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and the Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), I/O3 (HOLD#). The Dual I/O data is transferred with speed of 266Mbit/s, and the Quad I/O data is transferred with speed of 532Mbit/s.
Funkcje
Tłumaczenie AI
- 32M-bit Serial Flash - 4096K-Byte - 256 Bytes per programmable page
- Standard, Dual, Quad SPI - Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD# - Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD# - Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3
- High Speed Clock Frequency - 133MHz for fast read - Dual I/O Data transfer up to 266Mbits/s - Quad I/O Data transfer up to 532Mbits/s
- Software/Hardware Write Protection - Write protect all/portion of memory via software - Enable/Disable protection with WP# Pin - Top/Bottom Block protection
- Endurance and Data Retention - Minimum 100,000 Program/Erase Cycles - 20-year data retention typical
- Allows XiP (eXecute in Place) Operation - High speed Read reduce overall XiP instruction fetch time - Continuous Read with Wrap further reduce data latency to fill up SoC cache
- Fast Program/Erase Speed - Page Program time: 0.5ms typical - Sector Erase time: 45ms typical - Block Erase time: 0.15s/0.25s typical - Chip Erase time: 12s typical
- Flexible Architecture - Uniform Sector of 4K-Byte - Uniform Block of 32/64K-Byte
- Low Power Consumption - 12μA typical standby current - 1μA typical deep power down current
- Advanced Security Features - 128-bit Unique ID for each device - Serial Flash Discoverable parameters (SFDP) register - 3x1024-Byte Security Registers With OTP Locks
- Single Power Supply Voltage - Full voltage range: 2.7-3.6V
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
