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MACOM CG2H40010F
| Producent | |
| Nr części prod. | CG2H40010F |
| Nr LCSC | C25848277 |
| Opak. | SMD |
| Numer Klienta | |
| Klucz. cechy | 120V 1.5A 1 N-channel SMD RF FETs, MOSFETs RoHS |
| Karta Katalogowa | MACOM CG2H40010F |
| Zgodność z RoHS | 1 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Producent | MACOM | |
| Opak. | SMD | |
| Drain to Source Voltage | 120V | |
| Current - Continuous Drain(Id) | 1.5A | |
| RDS(on) | - | |
| Ciss-Input Capacitance | 4.19pF | |
| Technology | D-mode | |
| Operating Temperature | -40℃~+150℃ | |
| Pd - Power Dissipation | - | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss) | 0.186pF | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Output Capacitance(Coss) | 1.84pF |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Producent | MACOM | |
| Opak. | SMD | |
| Drain to Source Voltage | 120V | |
| Current - Continuous Drain(Id) | 1.5A | |
| RDS(on) | - | |
| Ciss-Input Capacitance | 4.19pF | |
| Technology | D-mode |
| Typ | Opis | |
|---|---|---|
| Operating Temperature | -40℃~+150℃ | |
| Pd - Power Dissipation | - | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss) | 0.186pF | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Output Capacitance(Coss) | 1.84pF |
Opis
The CG2H40010 is a high-performance GaN HEMT. Operating from a 28V supply, the device provides a versatile broadband solution for a wide range of RF and microwave applications. The inherently high efficiency, high gain, and broadband capability of GaN HEMTs make the CG2H40010 well suited for both linear and compressed amplifier circuits. The transistor is available in both a screw-mount flange package and a solder-mount pill package.
Zastosowania
- Land mobile radio
- Broadband amplifiers
- Cellular infrastructure
- Test and measurement
- Class A, Class AB linear amplifiers
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Producent | MACOM | |
| Opak. | SMD | |
| Drain to Source Voltage | 120V | |
| Current - Continuous Drain(Id) | 1.5A | |
| RDS(on) | - | |
| Ciss-Input Capacitance | 4.19pF | |
| Technology | D-mode | |
| Operating Temperature | -40℃~+150℃ | |
| Pd - Power Dissipation | - | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss) | 0.186pF | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Output Capacitance(Coss) | 1.84pF |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Producent | MACOM | |
| Opak. | SMD | |
| Drain to Source Voltage | 120V | |
| Current - Continuous Drain(Id) | 1.5A | |
| RDS(on) | - | |
| Ciss-Input Capacitance | 4.19pF | |
| Technology | D-mode |
| Typ | Opis | |
|---|---|---|
| Operating Temperature | -40℃~+150℃ | |
| Pd - Power Dissipation | - | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss) | 0.186pF | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Output Capacitance(Coss) | 1.84pF |
Opis
The CG2H40010 is a high-performance GaN HEMT. Operating from a 28V supply, the device provides a versatile broadband solution for a wide range of RF and microwave applications. The inherently high efficiency, high gain, and broadband capability of GaN HEMTs make the CG2H40010 well suited for both linear and compressed amplifier circuits. The transistor is available in both a screw-mount flange package and a solder-mount pill package.
Zastosowania
- Land mobile radio
- Broadband amplifiers
- Cellular infrastructure
- Test and measurement
- Class A, Class AB linear amplifiers
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Typ | Szczegóły |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |