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HXY MOSFET RFD12N06RLES-HXY
| Producent | HXY MOSFETAsian Brands |
| Nr części prod. | RFD12N06RLES-HXY |
| Nr LCSC | C22366902 |
| Opak. | TO-252-2L |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 60V 20A TO-252-2L |
| Karta Katalogowa | HXY MOSFET RFD12N06RLES-HXY |
| Zgodność z RoHS | 2 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HXY MOSFET | |
| Opak. | TO-252-2L | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 60pF | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 1.355nF | |
| Pd - Power Dissipation | 34.7W | |
| Reverse Transfer Capacitance (Crss) | 49pF | |
| RDS(on) | 25mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 22nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HXY MOSFET | |
| Opak. | TO-252-2L | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 60pF | |
| Current - Continuous Drain(Id) | 20A |
| Typ | Opis | |
|---|---|---|
| Ciss-Input Capacitance | 1.355nF | |
| Pd - Power Dissipation | 34.7W | |
| Reverse Transfer Capacitance (Crss) | 49pF | |
| RDS(on) | 25mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 22nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Type | N-Channel |
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HXY MOSFET | |
| Opak. | TO-252-2L | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 60pF | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 1.355nF | |
| Pd - Power Dissipation | 34.7W | |
| Reverse Transfer Capacitance (Crss) | 49pF | |
| RDS(on) | 25mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 22nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HXY MOSFET | |
| Opak. | TO-252-2L | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 60pF | |
| Current - Continuous Drain(Id) | 20A |
| Typ | Opis | |
|---|---|---|
| Ciss-Input Capacitance | 1.355nF | |
| Pd - Power Dissipation | 34.7W | |
| Reverse Transfer Capacitance (Crss) | 49pF | |
| RDS(on) | 25mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 22nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Type | N-Channel |
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C22366902 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |