VISHAY V10K120CHM3/H
| Producent | |
| Nr części prod. | V10K120CHM3/H |
| Nr LCSC | C17637796 |
| Opak. | - |
| Numer Klienta | |
| Klucz. cechy | 1 Pair Common Cathode 10A 120V 810mV@5A Diode Arrays RoHS |
| Karta Katalogowa | VISHAY V10K120CHM3/H |
| Zgodność z RoHS | 1 dokumentów dostępnych |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Producent | VISHAY | |
| Opak. | - | |
| Non-Repetitive Peak Forward Surge Current | 100A | |
| Diode Configuration | 1 Pair Common Cathode | |
| Current - Rectified | 10A | |
| Operating Junction Temperature Range | -40℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 120V | |
| Voltage - Forward(Vf@If) | 810mV@5A | |
| Reverse Leakage Current (Ir) | 400uA@120V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Producent | VISHAY | |
| Opak. | - | |
| Non-Repetitive Peak Forward Surge Current | 100A | |
| Diode Configuration | 1 Pair Common Cathode |
| Typ | Opis | |
|---|---|---|
| Current - Rectified | 10A | |
| Operating Junction Temperature Range | -40℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 120V | |
| Voltage - Forward(Vf@If) | 810mV@5A | |
| Reverse Leakage Current (Ir) | 400uA@120V |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
High current density surface mount TMBS (Trench MOS Barrier Schottky) rectifier with ultra-low VF = 0.51 V at IF = 2.5 A.
Funkcje
Tłumaczenie AI
- Trench MOS Schottky technology
- Low forward voltage drop, low power loss, high efficiency operation
- MSL Level 1 per J-STD-020, LF max peak 260℃
- AEC-Q101 qualified parts available
- Automotive order code: NHM3 for base part number
Zastosowania
Tłumaczenie AI
For use in low-voltage, high-frequency DC/DC converters, freewheeling diode, and polarity protection applications.
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Producent | VISHAY | |
| Opak. | - | |
| Non-Repetitive Peak Forward Surge Current | 100A | |
| Diode Configuration | 1 Pair Common Cathode | |
| Current - Rectified | 10A | |
| Operating Junction Temperature Range | -40℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 120V | |
| Voltage - Forward(Vf@If) | 810mV@5A | |
| Reverse Leakage Current (Ir) | 400uA@120V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Producent | VISHAY | |
| Opak. | - | |
| Non-Repetitive Peak Forward Surge Current | 100A | |
| Diode Configuration | 1 Pair Common Cathode |
| Typ | Opis | |
|---|---|---|
| Current - Rectified | 10A | |
| Operating Junction Temperature Range | -40℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 120V | |
| Voltage - Forward(Vf@If) | 810mV@5A | |
| Reverse Leakage Current (Ir) | 400uA@120V |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
High current density surface mount TMBS (Trench MOS Barrier Schottky) rectifier with ultra-low VF = 0.51 V at IF = 2.5 A.
Funkcje
Tłumaczenie AI
- Trench MOS Schottky technology
- Low forward voltage drop, low power loss, high efficiency operation
- MSL Level 1 per J-STD-020, LF max peak 260℃
- AEC-Q101 qualified parts available
- Automotive order code: NHM3 for base part number
Zastosowania
Tłumaczenie AI
For use in low-voltage, high-frequency DC/DC converters, freewheeling diode, and polarity protection applications.
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

