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Zdjęcia poglądowe
Modele EDAEasyEDA
Infineon IKW40N120T2
| Producent | |
| Nr części prod. | IKW40N120T2 |
| Nr LCSC | C111028 |
| Opak. | TO-247-3 |
| Numer Klienta | |
| Klucz. cechy | TrenchStop 2nd Generation Series for 1200 V applications |
| Karta Katalogowa | Infineon IKW40N120T2 |
| Zgodność z RoHS | 1 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Producent | Infineon | |
| Opak. | TO-247-3 | |
| Td(off) | 314ns | |
| Pd - Power Dissipation | 480W | |
| Td(on) | 33ns | |
| Current - Collector(Ic) | 75A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 125pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@1.5mA | |
| Operating Temperature | -40℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 2.2V@40A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 285ns | |
| Switching Energy(Eoff) | 2.05mJ | |
| Turn-On Energy (Eon) | 3.2mJ | |
| Input Capacitance(Cies) | 2.36nF | |
| Gate Charge(Qg) | 192nC@15V | |
| Output Capacitance(Coes) | 230pF |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Producent | Infineon | |
| Opak. | TO-247-3 | |
| Td(off) | 314ns | |
| Pd - Power Dissipation | 480W | |
| Td(on) | 33ns | |
| Current - Collector(Ic) | 75A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 125pF | |
| IGBT Type | - |
| Typ | Opis | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@1.5mA | |
| Operating Temperature | -40℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 2.2V@40A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 285ns | |
| Switching Energy(Eoff) | 2.05mJ | |
| Turn-On Energy (Eon) | 3.2mJ | |
| Input Capacitance(Cies) | 2.36nF | |
| Gate Charge(Qg) | 192nC@15V | |
| Output Capacitance(Coes) | 230pF |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Best in class TO247
- Short circuit withstand time – 10μs
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- Easy paralleling capability due to positive temperature coefficient in VCE(sat)
- Low EMI
- Low Gate Charge
- Very soft, fast recovery anti-parallel Emitter Controlled HEDiode
- Qualified according to JEDEC1 for target applications
- Pb-free lead plating; RoHS compliant
- Complete product spectrum and PSpice Models
Zastosowania
Tłumaczenie AI
- Frequency Converters
- Uninterrupted Power Supply
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Producent | Infineon | |
| Opak. | TO-247-3 | |
| Td(off) | 314ns | |
| Pd - Power Dissipation | 480W | |
| Td(on) | 33ns | |
| Current - Collector(Ic) | 75A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 125pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@1.5mA | |
| Operating Temperature | -40℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 2.2V@40A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 285ns | |
| Switching Energy(Eoff) | 2.05mJ | |
| Turn-On Energy (Eon) | 3.2mJ | |
| Input Capacitance(Cies) | 2.36nF | |
| Gate Charge(Qg) | 192nC@15V | |
| Output Capacitance(Coes) | 230pF |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Producent | Infineon | |
| Opak. | TO-247-3 | |
| Td(off) | 314ns | |
| Pd - Power Dissipation | 480W | |
| Td(on) | 33ns | |
| Current - Collector(Ic) | 75A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 125pF | |
| IGBT Type | - |
| Typ | Opis | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@1.5mA | |
| Operating Temperature | -40℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 2.2V@40A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 285ns | |
| Switching Energy(Eoff) | 2.05mJ | |
| Turn-On Energy (Eon) | 3.2mJ | |
| Input Capacitance(Cies) | 2.36nF | |
| Gate Charge(Qg) | 192nC@15V | |
| Output Capacitance(Coes) | 230pF |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Best in class TO247
- Short circuit withstand time – 10μs
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- Easy paralleling capability due to positive temperature coefficient in VCE(sat)
- Low EMI
- Low Gate Charge
- Very soft, fast recovery anti-parallel Emitter Controlled HEDiode
- Qualified according to JEDEC1 for target applications
- Pb-free lead plating; RoHS compliant
- Complete product spectrum and PSpice Models
Zastosowania
Tłumaczenie AI
- Frequency Converters
- Uninterrupted Power Supply
C111028 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |