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Modele EDAEasyEDA
Winsok Semicon WSF45P06
| Producent | Winsok SemiconAsian Brands |
| Nr części prod. | WSF45P06 |
| Nr LCSC | C110923 |
| Opak. | TO-252 |
| Numer Klienta | |
| Klucz. cechy | MOSFET P-CH 60V 45A TO-252 |
| Karta Katalogowa | Winsok Semicon WSF45P06 |
| Zgodność z RoHS | 2 dokumentów dostępnych |
| Części alternatywne | 2 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Winsok Semicon | |
| Opak. | TO-252 | |
| Output Capacitance(Coss) | 158pF | |
| Ciss-Input Capacitance | 1.914nF | |
| Pd - Power Dissipation | 31.3W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 45A | |
| Reverse Transfer Capacitance (Crss) | 116pF | |
| RDS(on) | 65mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 4.1nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Winsok Semicon | |
| Opak. | TO-252 | |
| Output Capacitance(Coss) | 158pF | |
| Ciss-Input Capacitance | 1.914nF | |
| Pd - Power Dissipation | 31.3W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 45A | |
| Reverse Transfer Capacitance (Crss) | 116pF | |
| RDS(on) | 65mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 4.1nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
The WSF45P06 is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDsON and gate charge for most of the synchronous buck converter applications. The WSF45P06 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Funkcje
Tłumaczenie AI
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- 100% EAS Guaranteed
- GreenDevice Available
Zastosowania
Tłumaczenie AI
- High Frequency Point-of-Load Synchronous BuckConverter for MB/NB/UMPC/VGA
- Networking DC-DC Power System
- CCFL Back-light Inverter
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Na stanie: 800
800 W magazynie, wysyłka natychmiastowa
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 0.5808$ 0.5228 | $ 0.52 |
| 10+ | $ 0.4807$ 0.4327 | $ 4.33 |
| 30+ | $ 0.4397$ 0.3958 | $ 11.87 |
| 100+ | $ 0.3856$ 0.3471 | $ 34.71 |
| 500+ | $ 0.2478$ 0.2231 | $ 111.55 |
| 1,000+ | $ 0.233$ 0.2097 | $ 209.70 |
Standardowa Obudowa2500/Full Reel | ||
Lepsza cena za większą ilość?
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Winsok Semicon | |
| Opak. | TO-252 | |
| Output Capacitance(Coss) | 158pF | |
| Ciss-Input Capacitance | 1.914nF | |
| Pd - Power Dissipation | 31.3W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 45A | |
| Reverse Transfer Capacitance (Crss) | 116pF | |
| RDS(on) | 65mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 4.1nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Winsok Semicon | |
| Opak. | TO-252 | |
| Output Capacitance(Coss) | 158pF | |
| Ciss-Input Capacitance | 1.914nF | |
| Pd - Power Dissipation | 31.3W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 45A | |
| Reverse Transfer Capacitance (Crss) | 116pF | |
| RDS(on) | 65mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 4.1nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
The WSF45P06 is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDsON and gate charge for most of the synchronous buck converter applications. The WSF45P06 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Funkcje
Tłumaczenie AI
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- 100% EAS Guaranteed
- GreenDevice Available
Zastosowania
Tłumaczenie AI
- High Frequency Point-of-Load Synchronous BuckConverter for MB/NB/UMPC/VGA
- Networking DC-DC Power System
- CCFL Back-light Inverter
C110923 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |