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Zdjęcia poglądowe
Modele EDAEasyEDA
DIODES BCX5616QTA
| Producent | |
| Nr części prod. | BCX5616QTA |
| Nr LCSC | C526478 |
| Opak. | SOT-89 |
| Numer Klienta | |
| Klucz. cechy | TRANS NPN 80V 1A SOT-89 |
| Karta Katalogowa | DIODES BCX5616QTA |
| Zgodność z RoHS | 5 dokumentów dostępnych |
| Części alternatywne | 10 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | DIODES | |
| Opak. | SOT-89 | |
| Operating Temperature | -65℃~+150℃ | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 150MHz | |
| Collector - Emitter Voltage VCEO | 80V | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 100 | |
| Pd - Power Dissipation | 1.5W | |
| Current - Collector(Ic) | 1A | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 500mV |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | DIODES | |
| Opak. | SOT-89 | |
| Operating Temperature | -65℃~+150℃ | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 150MHz | |
| Collector - Emitter Voltage VCEO | 80V | |
| Emitter-Base Voltage VEBO | 6V |
| Typ | Opis | |
|---|---|---|
| DC Current Gain | 100 | |
| Pd - Power Dissipation | 1.5W | |
| Current - Collector(Ic) | 1A | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 500mV |
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Opis
Tłumaczenie AI
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.
Funkcje
Tłumaczenie AI
- BVCEO > 80 V
- Ic = 1 A High Continuous Collector Current
- ICM = 2.0 A Peak Pulse Current
- Low Saturation Voltage VCE(sat) < 500 mV @ 0.5A
- Epitaxial Planar Die Construction
- Complementary PNP types: BCX5316Q
- Totally Lead-Free & Fully RoHS Compliant
- Halogen- and Antimony-Free. "Green" Device
- The BCX5616Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities.
Na stanie: 992
992 W magazynie, wysyłka natychmiastowa
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 0.5452 | $ 0.55 |
| 10+ | $ 0.4385 | $ 4.39 |
| 30+ | $ 0.3859 | $ 11.58 |
| 100+ | $ 0.3334 | $ 33.34 |
| 500+ | $ 0.3006 | $ 150.30 |
| 1,000+ | $ 0.2858 | $ 285.80 |
Standardowa Obudowa1000/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | DIODES | |
| Opak. | SOT-89 | |
| Operating Temperature | -65℃~+150℃ | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 150MHz | |
| Collector - Emitter Voltage VCEO | 80V | |
| Emitter-Base Voltage VEBO | 6V | |
| DC Current Gain | 100 | |
| Pd - Power Dissipation | 1.5W | |
| Current - Collector(Ic) | 1A | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 500mV |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | DIODES | |
| Opak. | SOT-89 | |
| Operating Temperature | -65℃~+150℃ | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 150MHz | |
| Collector - Emitter Voltage VCEO | 80V | |
| Emitter-Base Voltage VEBO | 6V |
| Typ | Opis | |
|---|---|---|
| DC Current Gain | 100 | |
| Pd - Power Dissipation | 1.5W | |
| Current - Collector(Ic) | 1A | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 500mV |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.
Funkcje
Tłumaczenie AI
- BVCEO > 80 V
- Ic = 1 A High Continuous Collector Current
- ICM = 2.0 A Peak Pulse Current
- Low Saturation Voltage VCE(sat) < 500 mV @ 0.5A
- Epitaxial Planar Die Construction
- Complementary PNP types: BCX5316Q
- Totally Lead-Free & Fully RoHS Compliant
- Halogen- and Antimony-Free. "Green" Device
- The BCX5616Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities.
C526478 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| BCX56-16-AU_R1_000A1 | PANJIT | SOT-89 | 45 | $ 0.1326 | ||
| PBHV8115X,115 | Nexperia | SOT-89 | 1 | $ 0.4428 | ||
| BCX56-16,115 | Nexperia | SOT-89 | 1,482 | $ 0.5207 | ||
| 2SC3647T-TD-E | onsemi | SOT-89-3 | 42 | $ 0.6195 | ||
| BCX56-16 | TECH PUBLIC | SOT-89 | 280 | $ 0.0632 | ||
| BCX5616QTC | DIODES | SOT-89 | 0 | $ 0.1068 | ||
| BCX56-16,135 | Nexperia | SOT-89 | 0 | $ 0.2573 | ||
| BCX56-16,147 | Nexperia | SOT-89 | 0 | $ 0.2748 | ||
| ZXTN10150DZTA | DIODES | SOT-89-3L | 0 | $ 0.3933 | ||
| BCX56-16HE3-TP | MCC | SOT-89 | 0 | $ 0.1161 |