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UTC 12N65KL-TF1-T

Produttore
UTCAsian Brands
Cod. Prod.
12N65KL-TF1-T
Cod. LCSC
C99947
Imballo
TO-220F1
Numero Cliente
Attr. chiave
MOSFET N-CH 650V 12A TO-220F1
Scheda TecnicaUTC 12N65KL-TF1-T
Conformità RoHS1 documenti disponibili
Parti alternative5
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Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ProduttoreUTC
ImballoTO-220F1
Output Capacitance(Coss)175pF
Ciss-Input Capacitance1.6nF
Pd - Power Dissipation51W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage650V
Current - Continuous Drain(Id)12A
Reverse Transfer Capacitance (Crss)10pF
RDS(on)750mΩ@10V
Number1 N-channel
Gate Charge(Qg)39nC@10V
Vgs±30V
Gate Threshold Voltage (Vgs(th))4V
TypeN-Channel
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Descrizione

Traduzione AI

The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC’s proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode, the advanced technology has been especially tailored.

Caratteristiche

Traduzione AI
  • Rds(ON) < 0.75 Ω @ Vgs = 10 V, Id = 6 A
  • Fast switching capability
  • Avalanche energy specified
  • Improved dv/dt capability, high ruggedness

Applicazioni

Traduzione AI
  • High-efficiency switch-mode power supply