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VBsemi Elec IRFU9120NPBF-VB
| 제조업체 | VBsemi ElecAsian Brands |
| 제조사 품번 | IRFU9120NPBF-VB |
| LCSC 번호 | C7494435 |
| 포장 | TO-251 |
| 고객 번호 | |
| 주요 제원 | MOSFET P-CH 100V 12A TO-251 |
| 데이터시트 | VBsemi Elec IRFU9120NPBF-VB |
| 대체 부품 | 5 |
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | VBsemi Elec | |
| 포장 | TO-251 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 65pF | |
| Current - Continuous Drain(Id) | 12A | |
| Ciss-Input Capacitance | 1.055nF | |
| Pd - Power Dissipation | 32.1W | |
| Reverse Transfer Capacitance (Crss) | 41pF | |
| RDS(on) | 215mΩ@10V;234mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 23nC@10V;11nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | P-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | VBsemi Elec | |
| 포장 | TO-251 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 65pF | |
| Current - Continuous Drain(Id) | 12A | |
| Ciss-Input Capacitance | 1.055nF |
| 타입 | 설명 | |
|---|---|---|
| Pd - Power Dissipation | 32.1W | |
| Reverse Transfer Capacitance (Crss) | 41pF | |
| RDS(on) | 215mΩ@10V;234mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 23nC@10V;11nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | P-Channel |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
4N65 is suitable for various power switching circuits, enabling system miniaturization and higher efficiency. Available in TO-252-2L package, RoHS compliant.
주요 특징
AI 번역
- Compliant with halogen-free requirements as defined by IEC 61249-2-21
- Trench power MOSFET
- 100% Rg and UIS tested
- Compliant with RoHS Directive 2002/95/EC
응용 분야
AI 번역
- Power switch
- DC/DC converter
모든 주문 보장
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제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | VBsemi Elec | |
| 포장 | TO-251 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 65pF | |
| Current - Continuous Drain(Id) | 12A | |
| Ciss-Input Capacitance | 1.055nF | |
| Pd - Power Dissipation | 32.1W | |
| Reverse Transfer Capacitance (Crss) | 41pF | |
| RDS(on) | 215mΩ@10V;234mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 23nC@10V;11nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | P-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | VBsemi Elec | |
| 포장 | TO-251 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 65pF | |
| Current - Continuous Drain(Id) | 12A | |
| Ciss-Input Capacitance | 1.055nF |
| 타입 | 설명 | |
|---|---|---|
| Pd - Power Dissipation | 32.1W | |
| Reverse Transfer Capacitance (Crss) | 41pF | |
| RDS(on) | 215mΩ@10V;234mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 23nC@10V;11nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | P-Channel |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
4N65 is suitable for various power switching circuits, enabling system miniaturization and higher efficiency. Available in TO-252-2L package, RoHS compliant.
주요 특징
AI 번역
- Compliant with halogen-free requirements as defined by IEC 61249-2-21
- Trench power MOSFET
- 100% Rg and UIS tested
- Compliant with RoHS Directive 2002/95/EC
응용 분야
AI 번역
- Power switch
- DC/DC converter
C7494435 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| 타입 | 세부사항 |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |