MICROCHIP APT20M22LVFRG
| Hersteller | |
| Herst.-Teilenr. | APT20M22LVFRG |
| LCSC-Nr. | C7450831 |
| Verp. | TO-264 |
| Kundennummer | |
| Hauptmerkm. | 200V 100A 520W 22mΩ@10V 1 N-channel TO-264 Single FETs, MOSFETs RoHS |
| Datenblatt | MICROCHIP APT20M22LVFRG |
| RoHS-Konformität | 2 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MICROCHIP | |
| Verp. | TO-264 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 10.2nF | |
| Pd - Power Dissipation | 520W | |
| RDS(on) | 22mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 435nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MICROCHIP | |
| Verp. | TO-264 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 100A |
| Typ | Beschreibung | |
|---|---|---|
| Ciss-Input Capacitance | 10.2nF | |
| Pd - Power Dissipation | 520W | |
| RDS(on) | 22mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 435nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
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Beschreibung
KI-Übersetzung
Power MOS V is a new generation of high-voltage N-channel enhancement-mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density, and reduces on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.
Merkmale
KI-Übersetzung
- Fast recovery body diode
- Low leakage current
- TO-264 package
- Faster switching speed
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MICROCHIP | |
| Verp. | TO-264 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 10.2nF | |
| Pd - Power Dissipation | 520W | |
| RDS(on) | 22mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 435nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MICROCHIP | |
| Verp. | TO-264 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 100A |
| Typ | Beschreibung | |
|---|---|---|
| Ciss-Input Capacitance | 10.2nF | |
| Pd - Power Dissipation | 520W | |
| RDS(on) | 22mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 435nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
Power MOS V is a new generation of high-voltage N-channel enhancement-mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density, and reduces on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.
Merkmale
KI-Übersetzung
- Fast recovery body diode
- Low leakage current
- TO-264 package
- Faster switching speed
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

