MICROCHIP 93C86C-E/ST
| Hersteller | |
| Herst.-Teilenr. | 93C86C-E/ST |
| LCSC-Nr. | C619807 |
| Verp. | TSSOP-8 |
| Kundennummer | |
| Hauptmerkm. | 16Kbit 3MHz SPI TSSOP-8 Memory RoHS |
| Datenblatt | MICROCHIP 93C86C-E/ST |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | MICROCHIP | |
| Verp. | TSSOP-8 | |
| Operating Temperature | -40℃~+125℃ | |
| Features | Hardware write protection function;Power-down/Power-up protection circuit | |
| Memory Size | 16Kbit | |
| Voltage - Supply | 4.5V~5.5V;3mA | |
| Clock Frequency | 3MHz | |
| Access Time | - | |
| Data Retention - TDR (Year) | 200 Years | |
| Write Cycle Time(tWC) | 2ms | |
| Standby Supply Current | 5uA | |
| Write Cycle Endurance | 1,000,000 cycles | |
| Interface | SPI |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | MICROCHIP | |
| Verp. | TSSOP-8 | |
| Operating Temperature | -40℃~+125℃ | |
| Features | Hardware write protection function;Power-down/Power-up protection circuit | |
| Memory Size | 16Kbit | |
| Voltage - Supply | 4.5V~5.5V;3mA |
| Typ | Beschreibung | |
|---|---|---|
| Clock Frequency | 3MHz | |
| Access Time | - | |
| Data Retention - TDR (Year) | 200 Years | |
| Write Cycle Time(tWC) | 2ms | |
| Standby Supply Current | 5uA | |
| Write Cycle Endurance | 1,000,000 cycles | |
| Interface | SPI |
Beschreibung
The 93XX86A/B/C devices are 16-Kbit low-voltage serial Electrically Erasable PROMs (EEPROM). Word-selectable devices such as the 93XX86C are dependent upon external logic levels driving the ORG pin to set word size. The 93XX86A devices provide dedicated 8-bit memory organization, while the 93XX86B devices provide dedicated 16-bit memory organization. A Program Enable (PE) pin allows the user to write-protect the entire memory array. Advanced CMOS technology makes these devices ideal for low-power, nonvolatile memory applications.
Merkmale
- Low-Power CMOS Technology
- ORG Pin to Select Word Size for ‘86C' Version: 2048x8-bit Organization 'A' Devices (no ORG), 1024x16-bit Organization 'B' Devices (no ORG)
- Program Enable Pin to Write-Protect the Entire Array (86C' version only)
- Self-timed Erase/Write Cycles (including Auto-Erase)
- Automatic Erase All (ERAL) before Write All (WRAL)
- Power-On/Off Data Protection Circuitry
- Industry Standard Three-Wire Serial I/O
- Device Status Signal (Ready/Busy)
- Sequential Read Function
- High Reliability: Endurance: 1,000,000 erase/write cycles, Data Retention: >200 years, ESD protection: >4000V
- RoHS Compliant
- Temperature Ranges Supported: Industrial (I): -40℃ to +85℃, Extended (E): -40℃ to +125℃
- Automotive AEC-Q100 Qualified
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | MICROCHIP | |
| Verp. | TSSOP-8 | |
| Operating Temperature | -40℃~+125℃ | |
| Features | Hardware write protection function;Power-down/Power-up protection circuit | |
| Memory Size | 16Kbit | |
| Voltage - Supply | 4.5V~5.5V;3mA | |
| Clock Frequency | 3MHz | |
| Access Time | - | |
| Data Retention - TDR (Year) | 200 Years | |
| Write Cycle Time(tWC) | 2ms | |
| Standby Supply Current | 5uA | |
| Write Cycle Endurance | 1,000,000 cycles | |
| Interface | SPI |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Integrated Circuits (ICs)/Memory/Memory | |
| Hersteller | MICROCHIP | |
| Verp. | TSSOP-8 | |
| Operating Temperature | -40℃~+125℃ | |
| Features | Hardware write protection function;Power-down/Power-up protection circuit | |
| Memory Size | 16Kbit | |
| Voltage - Supply | 4.5V~5.5V;3mA |
| Typ | Beschreibung | |
|---|---|---|
| Clock Frequency | 3MHz | |
| Access Time | - | |
| Data Retention - TDR (Year) | 200 Years | |
| Write Cycle Time(tWC) | 2ms | |
| Standby Supply Current | 5uA | |
| Write Cycle Endurance | 1,000,000 cycles | |
| Interface | SPI |
Beschreibung
The 93XX86A/B/C devices are 16-Kbit low-voltage serial Electrically Erasable PROMs (EEPROM). Word-selectable devices such as the 93XX86C are dependent upon external logic levels driving the ORG pin to set word size. The 93XX86A devices provide dedicated 8-bit memory organization, while the 93XX86B devices provide dedicated 16-bit memory organization. A Program Enable (PE) pin allows the user to write-protect the entire memory array. Advanced CMOS technology makes these devices ideal for low-power, nonvolatile memory applications.
Merkmale
- Low-Power CMOS Technology
- ORG Pin to Select Word Size for ‘86C' Version: 2048x8-bit Organization 'A' Devices (no ORG), 1024x16-bit Organization 'B' Devices (no ORG)
- Program Enable Pin to Write-Protect the Entire Array (86C' version only)
- Self-timed Erase/Write Cycles (including Auto-Erase)
- Automatic Erase All (ERAL) before Write All (WRAL)
- Power-On/Off Data Protection Circuitry
- Industry Standard Three-Wire Serial I/O
- Device Status Signal (Ready/Busy)
- Sequential Read Function
- High Reliability: Endurance: 1,000,000 erase/write cycles, Data Retention: >200 years, ESD protection: >4000V
- RoHS Compliant
- Temperature Ranges Supported: Industrial (I): -40℃ to +85℃, Extended (E): -40℃ to +125℃
- Automotive AEC-Q100 Qualified
C619807 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Typ | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |