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onsemi FDMS86252L

Hersteller
onsemi
Herst.-Teilenr.
FDMS86252L
LCSC-Nr.
C606108
Verp.
Power-56-8
Kundennummer
Hauptmerkm.
MOSFET N-CH 150V 12A Power-56-8
Datenblattonsemi FDMS86252L
RoHS-Konformität4 Dokumente verfügbar
Alternativteile5
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch

Produktspezifikationen

Alle
TypBeschreibung
KategorieDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Herstelleronsemi
Verp.Power-56-8
Output Capacitance(Coss)74pF
Ciss-Input Capacitance1.335nF
Pd - Power Dissipation50W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage150V
Current - Continuous Drain(Id)12A
Reverse Transfer Capacitance (Crss)3pF
RDS(on)46mΩ@10V
Number1 N-channel
Gate Charge(Qg)15nC@10V
Vgs±20V
Gate Threshold Voltage (Vgs(th))3V
TypeN-Channel
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Beschreibung

KI-Übersetzung

This N-channel MOSFET is manufactured using Fairchild Semiconductor's advanced PowerTrench® process, which incorporates shielded gate technology. The process is optimized for on-resistance while maintaining excellent switching performance.

Merkmale

KI-Übersetzung
  • Shield gate MOSFET technology
  • Max rDS(on) = 56 mΩ at VGS = 10 V, ID = 4.4 A
  • Max rDS(on) = 71 mΩ at VGS = 6 V, ID = 3.8 A
  • Max rDS(on) = 75 mΩ at VGS = 4.5 V, ID = 3.7 A
  • Advanced package and silicon combination for low rDS(on) and high efficiency
  • Next-generation enhanced body diode technology with soft recovery characteristics
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS compliant

Anwendungen

KI-Übersetzung
  • OR-gate FET / load switch
  • Synchronous rectification
  • DC-DC conversion