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VISHAY VFT2045CBP-M3/4W
| 제조업체 | |
| 제조사 품번 | VFT2045CBP-M3/4W |
| LCSC 번호 | C5822276 |
| 포장 | ITO-220AB |
| 고객 번호 | |
| 주요 제원 | 1 Pair Common Cathode 10A 45V 580mV@10A ITO-220AB Diode Arrays RoHS |
| 데이터시트 | VISHAY VFT2045CBP-M3/4W |
| RoHS 준수 | 1개 문서 이용 가능 |
| 대체 부품 | 5 |
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| 제조업체 | VISHAY | |
| 포장 | ITO-220AB | |
| Non-Repetitive Peak Forward Surge Current | 160A | |
| Diode Configuration | 1 Pair Common Cathode | |
| Current - Rectified | 10A | |
| Operating Junction Temperature Range | -40℃~+150℃ | |
| Pd - Power Dissipation | - | |
| Voltage - DC Reverse(Vr) | 45V | |
| Reverse Leakage Current (Ir) | 2mA@45V | |
| Voltage - Forward(Vf@If) | 580mV@10A |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| 제조업체 | VISHAY | |
| 포장 | ITO-220AB | |
| Non-Repetitive Peak Forward Surge Current | 160A | |
| Diode Configuration | 1 Pair Common Cathode | |
| Current - Rectified | 10A |
| 타입 | 설명 | |
|---|---|---|
| Operating Junction Temperature Range | -40℃~+150℃ | |
| Pd - Power Dissipation | - | |
| Voltage - DC Reverse(Vr) | 45V | |
| Reverse Leakage Current (Ir) | 2mA@45V | |
| Voltage - Forward(Vf@If) | 580mV@10A |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
Trench MOS barrier Schottky rectifier for bypass protection in photovoltaic solar cells. Ultra-low forward voltage VF = 0.33 V at forward current IF = 5.0 A.
주요 특징
AI 번역
- Trench MOS Schottky technology
- Low forward voltage drop, low power loss
- RoHS compliant
- High efficiency operation
- Halogen-free
- Maximum wave soldering temperature 275°C for 10 s per JESD 22-B106
- Maximum junction temperature TJ of 200°C in solar bypass mode applications
응용 분야
AI 번역
Used as bypass diodes in solar cell junction boxes for protection, operating with DC forward current without reverse bias.
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제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| 제조업체 | VISHAY | |
| 포장 | ITO-220AB | |
| Non-Repetitive Peak Forward Surge Current | 160A | |
| Diode Configuration | 1 Pair Common Cathode | |
| Current - Rectified | 10A | |
| Operating Junction Temperature Range | -40℃~+150℃ | |
| Pd - Power Dissipation | - | |
| Voltage - DC Reverse(Vr) | 45V | |
| Reverse Leakage Current (Ir) | 2mA@45V | |
| Voltage - Forward(Vf@If) | 580mV@10A |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| 제조업체 | VISHAY | |
| 포장 | ITO-220AB | |
| Non-Repetitive Peak Forward Surge Current | 160A | |
| Diode Configuration | 1 Pair Common Cathode | |
| Current - Rectified | 10A |
| 타입 | 설명 | |
|---|---|---|
| Operating Junction Temperature Range | -40℃~+150℃ | |
| Pd - Power Dissipation | - | |
| Voltage - DC Reverse(Vr) | 45V | |
| Reverse Leakage Current (Ir) | 2mA@45V | |
| Voltage - Forward(Vf@If) | 580mV@10A |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
Trench MOS barrier Schottky rectifier for bypass protection in photovoltaic solar cells. Ultra-low forward voltage VF = 0.33 V at forward current IF = 5.0 A.
주요 특징
AI 번역
- Trench MOS Schottky technology
- Low forward voltage drop, low power loss
- RoHS compliant
- High efficiency operation
- Halogen-free
- Maximum wave soldering temperature 275°C for 10 s per JESD 22-B106
- Maximum junction temperature TJ of 200°C in solar bypass mode applications
응용 분야
AI 번역
Used as bypass diodes in solar cell junction boxes for protection, operating with DC forward current without reverse bias.
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |