JSMSEMI IPB70N10S3-12-JSM

제조업체	JSMSEMIAsian Brands
제조사 품번	IPB70N10S3-12-JSM
LCSC 번호	C55112157
포장	TO-263
고객 번호
주요 제원	156W 100V 70A 9mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS
데이터시트	JSMSEMI IPB70N10S3-12-JSM
RoHS 준수	4개 문서 이용 가능
대체 부품	5

제품 사양

전체

타입	설명
카테고리	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
제조업체	JSMSEMI
포장	TO-263
Output Capacitance(Coss)	680pF
Ciss-Input Capacitance	2.313nF
Pd - Power Dissipation	156W
Configuration	-
Drain to Source Voltage	100V
Operating Temperature	-55℃~+150℃
Current - Continuous Drain(Id)	70A
Reverse Transfer Capacitance (Crss)	15pF
RDS(on)	9mΩ@10V
Number	1 N-channel
Gate Charge(Qg)	29nC
Vgs	±20V
Gate Threshold Voltage (Vgs(th))	3V
Type	N-Channel

타입	설명
카테고리	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
제조업체	JSMSEMI
포장	TO-263
Output Capacitance(Coss)	680pF
Ciss-Input Capacitance	2.313nF
Pd - Power Dissipation	156W
Configuration	-
Drain to Source Voltage	100V
Operating Temperature	-55℃~+150℃

모든 주문 보장

100% 정품 · 30일 반품 또는 교환

전체

타입	설명
카테고리	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
제조업체	JSMSEMI
포장	TO-263
Output Capacitance(Coss)	680pF
Ciss-Input Capacitance	2.313nF
Pd - Power Dissipation	156W
Configuration	-
Drain to Source Voltage	100V
Operating Temperature	-55℃~+150℃
Current - Continuous Drain(Id)	70A
Reverse Transfer Capacitance (Crss)	15pF
RDS(on)	9mΩ@10V
Number	1 N-channel
Gate Charge(Qg)	29nC
Vgs	±20V
Gate Threshold Voltage (Vgs(th))	3V
Type	N-Channel

타입	설명
카테고리	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
제조업체	JSMSEMI
포장	TO-263
Output Capacitance(Coss)	680pF
Ciss-Input Capacitance	2.313nF
Pd - Power Dissipation	156W
Configuration	-
Drain to Source Voltage	100V
Operating Temperature	-55℃~+150℃