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EDA-ModelleEasyEDA
Nexperia BUK9Y58-75B,115
| Hersteller | |
| Herst.-Teilenr. | BUK9Y58-75B,115 |
| LCSC-Nr. | C550049 |
| Verp. | LFPAK56(PowerSO-8) |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 75V 20.73A LFPAK56(PowerSO-8) |
| Datenblatt | Nexperia BUK9Y58-75B,115 |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Nexperia | |
| Verp. | LFPAK56(PowerSO-8) | |
| Output Capacitance(Coss) | 106pF | |
| Ciss-Input Capacitance | 1.137nF | |
| Pd - Power Dissipation | 60.4W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 75V | |
| Current - Continuous Drain(Id) | 20.73A | |
| Reverse Transfer Capacitance (Crss) | 52pF | |
| RDS(on) | 53mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 10.7nC@5V | |
| Vgs | ±15V | |
| Gate Threshold Voltage (Vgs(th)) | 2.15V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Nexperia | |
| Verp. | LFPAK56(PowerSO-8) | |
| Output Capacitance(Coss) | 106pF | |
| Ciss-Input Capacitance | 1.137nF | |
| Pd - Power Dissipation | 60.4W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 75V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 20.73A | |
| Reverse Transfer Capacitance (Crss) | 52pF | |
| RDS(on) | 53mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 10.7nC@5V | |
| Vgs | ±15V | |
| Gate Threshold Voltage (Vgs(th)) | 2.15V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
Merkmale
KI-Übersetzung
- Low conduction losses due to low on-state resistance
- Q101 compliant
- Suitable for logic level gate drive sources
- Suitable for thermally demanding environments due to 175 °C rating
Anwendungen
KI-Übersetzung
- 12 V, 24 V, and 42 V loads
- General-purpose power switches
- Automotive systems
- Solenoid drivers
- DC-DC converters
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.7455 | $ 0.75 |
| 10+ | $ 0.7341 | $ 7.34 |
| 30+ | $ 0.7276 | $ 21.83 |
| 100+ | $ 0.7211 | $ 72.11 |
Standardgehäuse1500/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Nexperia | |
| Verp. | LFPAK56(PowerSO-8) | |
| Output Capacitance(Coss) | 106pF | |
| Ciss-Input Capacitance | 1.137nF | |
| Pd - Power Dissipation | 60.4W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 75V | |
| Current - Continuous Drain(Id) | 20.73A | |
| Reverse Transfer Capacitance (Crss) | 52pF | |
| RDS(on) | 53mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 10.7nC@5V | |
| Vgs | ±15V | |
| Gate Threshold Voltage (Vgs(th)) | 2.15V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Nexperia | |
| Verp. | LFPAK56(PowerSO-8) | |
| Output Capacitance(Coss) | 106pF | |
| Ciss-Input Capacitance | 1.137nF | |
| Pd - Power Dissipation | 60.4W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 75V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 20.73A | |
| Reverse Transfer Capacitance (Crss) | 52pF | |
| RDS(on) | 53mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 10.7nC@5V | |
| Vgs | ±15V | |
| Gate Threshold Voltage (Vgs(th)) | 2.15V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
Merkmale
KI-Übersetzung
- Low conduction losses due to low on-state resistance
- Q101 compliant
- Suitable for logic level gate drive sources
- Suitable for thermally demanding environments due to 175 °C rating
Anwendungen
KI-Übersetzung
- 12 V, 24 V, and 42 V loads
- General-purpose power switches
- Automotive systems
- Solenoid drivers
- DC-DC converters
C550049 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| PSMN041-80YLX | Nexperia | Ähnliche | LFPAK56(PowerSO-8) | 3 | $ 1.2116 | ||
| BUK9Y53-100B,115 | Nexperia | Ähnliche | LFPAK56(PowerSO-8) | 2 | $ 2.0493 | ||
| BUK9Y19-75B,115 | Nexperia | Ähnliche | LFPAK56(PowerSO-8) | 13 | $ 1.3826 | ||
| BUK9Y25-80E,115 | Nexperia | Ähnliche | LFPAK56(PowerSO-8) | 6,092 | $ 0.7686 | ||
| PSMN014-80YLX | Nexperia | Ähnliche | LFPAK56(PowerSO-8) | 31 | $ 1.9778 |