Nexperia BUK7Y153-100EX
| Produttore | |
| Cod. Prod. | BUK7Y153-100EX |
| Cod. LCSC | C549910 |
| Imballo | SOT-669 |
| Numero Cliente | |
| Attr. chiave | 37.3W 100V 9.4A 104mΩ@10V 1 N-channel N-Channel SOT-669 Single FETs, MOSFETs RoHS |
| Scheda Tecnica | Nexperia BUK7Y153-100EX |
| Conformità RoHS | 2 documenti disponibili |
| Parti alternative | 5 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Nexperia | |
| Imballo | SOT-669 | |
| Output Capacitance(Coss) | 62pF | |
| Ciss-Input Capacitance | 497pF | |
| Pd - Power Dissipation | 37.3W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 9.4A | |
| Reverse Transfer Capacitance (Crss) | 67pF | |
| RDS(on) | 104mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 9.4nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Nexperia | |
| Imballo | SOT-669 | |
| Output Capacitance(Coss) | 62pF | |
| Ciss-Input Capacitance | 497pF | |
| Pd - Power Dissipation | 37.3W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 9.4A | |
| Reverse Transfer Capacitance (Crss) | 67pF | |
| RDS(on) | 104mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 9.4nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
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Descrizione
Traduzione AI
Standard level N-channel MOSFET using TrenchMOS technology in an LFPAK56 (Power SO8) package. This product has been designed and qualified to AEC Q101 standard, suitable for high-performance automotive applications.
Caratteristiche
Traduzione AI
- Q101 compliant
- Repetitive avalanche rated
- 175°C rated for high thermal demand environments
- True standard-level gate with VGS(th) rated above 1 V at 175°C
Applicazioni
Traduzione AI
- 12 V, 24 V, and 48 V automotive systems
- Motor, lamp, and solenoid control
- Transmission control
- Ultra-high-performance power switching
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Nexperia | |
| Imballo | SOT-669 | |
| Output Capacitance(Coss) | 62pF | |
| Ciss-Input Capacitance | 497pF | |
| Pd - Power Dissipation | 37.3W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 9.4A | |
| Reverse Transfer Capacitance (Crss) | 67pF | |
| RDS(on) | 104mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 9.4nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Nexperia | |
| Imballo | SOT-669 | |
| Output Capacitance(Coss) | 62pF | |
| Ciss-Input Capacitance | 497pF | |
| Pd - Power Dissipation | 37.3W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 9.4A | |
| Reverse Transfer Capacitance (Crss) | 67pF | |
| RDS(on) | 104mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 9.4nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
Standard level N-channel MOSFET using TrenchMOS technology in an LFPAK56 (Power SO8) package. This product has been designed and qualified to AEC Q101 standard, suitable for high-performance automotive applications.
Caratteristiche
Traduzione AI
- Q101 compliant
- Repetitive avalanche rated
- 175°C rated for high thermal demand environments
- True standard-level gate with VGS(th) rated above 1 V at 175°C
Applicazioni
Traduzione AI
- 12 V, 24 V, and 48 V automotive systems
- Motor, lamp, and solenoid control
- Transmission control
- Ultra-high-performance power switching
C549910 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



