VISHAY IRFD420PBF
| Producent | |
| Nr części prod. | IRFD420PBF |
| Nr LCSC | C506431 |
| Opak. | HVMDIP-4 |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 500V 0.37A HVMDIP-4 |
| Karta Katalogowa | VISHAY IRFD420PBF |
| Zgodność z RoHS | 2 dokumentów dostępnych |
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VISHAY | |
| Opak. | HVMDIP-4 | |
| Output Capacitance(Coss) | 82pF | |
| Ciss-Input Capacitance | 360pF | |
| Pd - Power Dissipation | 1W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 370mA | |
| Reverse Transfer Capacitance (Crss) | 37pF | |
| RDS(on) | 3Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 24nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VISHAY | |
| Opak. | HVMDIP-4 | |
| Output Capacitance(Coss) | 82pF | |
| Ciss-Input Capacitance | 360pF | |
| Pd - Power Dissipation | 1W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 370mA | |
| Reverse Transfer Capacitance (Crss) | 37pF | |
| RDS(on) | 3Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 24nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Opis
Third generation Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
Funkcje
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- For Automatic Insertion
- End Stackable
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Compliant to RoHS Directive 2002/95/EC
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 1.1698 | $ 1.17 |
| 10+ | $ 0.9642 | $ 9.64 |
| 30+ | $ 0.853 | $ 25.59 |
| 100+ | $ 0.7247 | $ 72.47 |
| 500+ | $ 0.6691 | $ 334.55 |
| 1,000+ | $ 0.6428 | $ 642.80 |
Standardowa Obudowa100/Full Tube | ||
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VISHAY | |
| Opak. | HVMDIP-4 | |
| Output Capacitance(Coss) | 82pF | |
| Ciss-Input Capacitance | 360pF | |
| Pd - Power Dissipation | 1W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 370mA | |
| Reverse Transfer Capacitance (Crss) | 37pF | |
| RDS(on) | 3Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 24nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VISHAY | |
| Opak. | HVMDIP-4 | |
| Output Capacitance(Coss) | 82pF | |
| Ciss-Input Capacitance | 360pF | |
| Pd - Power Dissipation | 1W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 370mA | |
| Reverse Transfer Capacitance (Crss) | 37pF | |
| RDS(on) | 3Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 24nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Opis
Third generation Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
Funkcje
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- For Automatic Insertion
- End Stackable
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Compliant to RoHS Directive 2002/95/EC
C506431 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



