LCSC Electronics logoLCSC Electronics svg logo
로그인
USD

DOINGTER DOD444

제조업체
DOINGTERAsian Brands
제조사 품번
DOD444
LCSC 번호
C49190255
포장
TO-252
고객 번호
주요 제원
MOSFET 60V TO-252
데이터시트DOINGTER DOD444
RoHS 준수2개 문서 이용 가능
대체 부품5
모든 주문 보장
100% 정품 · 30일 반품 또는 교환

제품 사양

전체
타입설명
카테고리Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
제조업체DOINGTER
포장TO-252
Operating Temperature-55℃~+175℃
Drain to Source Voltage60V
Current - Continuous Drain(Id)30A
Output Capacitance(Coss)80pF
Ciss-Input Capacitance1.05nF
Pd - Power Dissipation55W
Reverse Transfer Capacitance (Crss)45pF
RDS(on)21mΩ@10V
Number1 N-channel
Gate Charge(Qg)25nC@10V
Gate Threshold Voltage (Vgs(th))1.6V
TypeN-Channel
도움말 및 피드백유사 제품 보기 (0) >

개요

AI 번역

This N-channel MOSFET utilizes advanced trench technology and design to achieve excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.

주요 특징

AI 번역
  • Drain-Source Voltage (VDS) = 60 V, Drain Current (ID) = 30 A, RDS(ON) < 30 mΩ at VGS = 10 V
  • Low gate charge
  • RoHS-compliant devices available
  • Advanced high cell density trench technology for ultra-low RDS(ON)
  • High-quality package with excellent thermal dissipation

응용 분야

AI 번역
  • Switch Mode Power Supply (SMPS) - Uninterruptible Power Supply (UPS) - Power Factor Correction (PFC) - Charger