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TDSEMIC US2D-TD
| Producent | TDSEMICAsian Brands |
| Nr części prod. | US2D-TD |
| Nr LCSC | C48606582 |
| Opak. | SMA |
| Numer Klienta | |
| Klucz. cechy | Diode 200V 2A SMA |
| Karta Katalogowa | TDSEMIC US2D-TD |
| Zgodność z RoHS | 1 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | TDSEMIC | |
| Opak. | SMA | |
| Reverse Recovery Time (trr) | 50ns | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 200V | |
| Diode Configuration | 1 Independent | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1V@2A | |
| Reverse Leakage Current (Ir) | 5uA | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Current - Rectified | 2A |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | TDSEMIC | |
| Opak. | SMA | |
| Reverse Recovery Time (trr) | 50ns | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Typ | Opis | |
|---|---|---|
| Diode Configuration | 1 Independent | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1V@2A | |
| Reverse Leakage Current (Ir) | 5uA | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Current - Rectified | 2A |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Surface mount application
- Low profile package
- Glass passivated chip junction
- Easy pick and place
- High efficiency
- Lead-free design compliant with EU RoHS 2011/65/EU directive
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | TDSEMIC | |
| Opak. | SMA | |
| Reverse Recovery Time (trr) | 50ns | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 200V | |
| Diode Configuration | 1 Independent | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1V@2A | |
| Reverse Leakage Current (Ir) | 5uA | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Current - Rectified | 2A |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | TDSEMIC | |
| Opak. | SMA | |
| Reverse Recovery Time (trr) | 50ns | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Typ | Opis | |
|---|---|---|
| Diode Configuration | 1 Independent | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1V@2A | |
| Reverse Leakage Current (Ir) | 5uA | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Current - Rectified | 2A |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Surface mount application
- Low profile package
- Glass passivated chip junction
- Easy pick and place
- High efficiency
- Lead-free design compliant with EU RoHS 2011/65/EU directive
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |