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Zdjęcia poglądowe
Modele EDAEasyEDA
Nexperia BSP122,115
| Producent | |
| Nr części prod. | BSP122,115 |
| Nr LCSC | C456102 |
| Opak. | SOT-223 |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 200V 550mA SOT-223 |
| Karta Katalogowa | Nexperia BSP122,115 |
| Zgodność z RoHS | 1 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Nexperia | |
| Opak. | SOT-223 | |
| Output Capacitance(Coss) | 20pF | |
| Ciss-Input Capacitance | 100pF | |
| Pd - Power Dissipation | 1.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 550mA | |
| Reverse Transfer Capacitance (Crss) | 10pF | |
| RDS(on) | 2.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Nexperia | |
| Opak. | SOT-223 | |
| Output Capacitance(Coss) | 20pF | |
| Ciss-Input Capacitance | 100pF | |
| Pd - Power Dissipation | 1.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 550mA | |
| Reverse Transfer Capacitance (Crss) | 10pF | |
| RDS(on) | 2.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
N-channel enhancement mode vertical D-MOS transistor in a SOT223 package and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.
Funkcje
Tłumaczenie AI
- Direct interface to C-MOS, TTL, etc.
- High-speed switching
- No secondary breakdown.
Zastosowania
Tłumaczenie AI
- telephone sets
- relay
- high-speed and line transformer drivers
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
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Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
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| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 0.4086 | $ 0.41 |
| 10+ | $ 0.3191 | $ 3.19 |
| 30+ | $ 0.2816 | $ 8.45 |
| 100+ | $ 0.2344 | $ 23.44 |
| 500+ | $ 0.2133 | $ 106.65 |
| 1,000+ | $ 0.2019 | $ 201.90 |
Standardowa Obudowa1000/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Nexperia | |
| Opak. | SOT-223 | |
| Output Capacitance(Coss) | 20pF | |
| Ciss-Input Capacitance | 100pF | |
| Pd - Power Dissipation | 1.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 550mA | |
| Reverse Transfer Capacitance (Crss) | 10pF | |
| RDS(on) | 2.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Nexperia | |
| Opak. | SOT-223 | |
| Output Capacitance(Coss) | 20pF | |
| Ciss-Input Capacitance | 100pF | |
| Pd - Power Dissipation | 1.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 550mA | |
| Reverse Transfer Capacitance (Crss) | 10pF | |
| RDS(on) | 2.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
N-channel enhancement mode vertical D-MOS transistor in a SOT223 package and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.
Funkcje
Tłumaczenie AI
- Direct interface to C-MOS, TTL, etc.
- High-speed switching
- No secondary breakdown.
Zastosowania
Tłumaczenie AI
- telephone sets
- relay
- high-speed and line transformer drivers
C456102 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| TPM2001NY3 | TECH PUBLIC | Podobne | SOT-223 | 215 | $ 0.1364 | ||
| BSP126,115-VB | VBsemi Elec | Podobne | SOT-223 | 2 | $0.5597 $0.5891 | ||
| BSP126,135-VB | VBsemi Elec | Podobne | SOT-223 | 5 | $0.6004 $0.6319 | ||
| BSP126/S911115-VB | VBsemi Elec | Podobne | SOT-223 | 5 | $0.6004 $0.6319 | ||
| IRFL214TRPBF-VB | VBsemi Elec | Podobne | SOT-223 | 8 | $0.4916 $0.5783 |