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Modelli EDAEasyEDA
Siliup SP40N01ABGHNP
| Produttore | SiliupAsian Brands |
| Cod. Prod. | SP40N01ABGHNP |
| Cod. LCSC | C45351229 |
| Imballo | PDFN5X6-8L |
| Numero Cliente | |
| Attr. chiave | MOSFET 40V 200A PDFN5X6-8L |
| Scheda Tecnica | Siliup SP40N01ABGHNP |
| Parti alternative | 3 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Siliup | |
| Imballo | PDFN5X6-8L | |
| Drain to Source Voltage | 40V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 1.807nF | |
| Current - Continuous Drain(Id) | 250A | |
| Ciss-Input Capacitance | 5.604nF | |
| Pd - Power Dissipation | 139W | |
| Reverse Transfer Capacitance (Crss) | 171pF | |
| RDS(on) | 0.75mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 82nC | |
| Vgs | ±20V | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Siliup | |
| Imballo | PDFN5X6-8L | |
| Drain to Source Voltage | 40V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 1.807nF | |
| Current - Continuous Drain(Id) | 250A | |
| Ciss-Input Capacitance | 5.604nF |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 139W | |
| Reverse Transfer Capacitance (Crss) | 171pF | |
| RDS(on) | 0.75mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 82nC | |
| Vgs | ±20V | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Siliup | |
| Imballo | PDFN5X6-8L | |
| Drain to Source Voltage | 40V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 1.807nF | |
| Current - Continuous Drain(Id) | 250A | |
| Ciss-Input Capacitance | 5.604nF | |
| Pd - Power Dissipation | 139W | |
| Reverse Transfer Capacitance (Crss) | 171pF | |
| RDS(on) | 0.75mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 82nC | |
| Vgs | ±20V | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Siliup | |
| Imballo | PDFN5X6-8L | |
| Drain to Source Voltage | 40V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 1.807nF | |
| Current - Continuous Drain(Id) | 250A | |
| Ciss-Input Capacitance | 5.604nF |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 139W | |
| Reverse Transfer Capacitance (Crss) | 171pF | |
| RDS(on) | 0.75mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 82nC | |
| Vgs | ±20V | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
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C45351229 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |