Zdjęcia poglądowe
Modele EDAEasyEDA
Littelfuse/IXYS IXKR40N60C
| Producent | |
| Nr części prod. | IXKR40N60C |
| Nr LCSC | C3290707 |
| Opak. | TO-247-3 |
| Numer Klienta | |
| Klucz. cechy | N-Channel, Current:38A, Voltage:600V |
| Karta Katalogowa | Littelfuse/IXYS IXKR40N60C |
| Zgodność z RoHS | 1 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Littelfuse/IXYS | |
| Opak. | TO-247-3 | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 38A | |
| Pd - Power Dissipation | - | |
| RDS(on) | 70mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 250nC | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Littelfuse/IXYS | |
| Opak. | TO-247-3 | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 38A |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | - | |
| RDS(on) | 70mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 250nC | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
Power MOS V® is a new generation of high-voltage N-channel enhancement-mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density, and reduces on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
Funkcje
Tłumaczenie AI
- ISOPLUS247™ package with DCB base
- Electrical isolation from heatsink
- Low coupling capacitance to heatsink for reduced EMI
- High power dissipation
- High temperature cycling capability of die on DCB
- Compatible with JEDEC TO-247AD
- Easy clip mounting
- Fast CoolMOS™ ¹⁾ 3rd generation power MOSFET
- High blocking capability
- Low on-state resistance
- Avalanche rated for unclamped inductive switching (UIS)
- Low thermal resistance due to reduced die thickness
- Enhanced total power density
Zastosowania
Tłumaczenie AI
- Switching Mode Power Supply (SMPS)
- Uninterruptible Power Supply (UPS)
- Power Factor Correction (PFC)
- Welding
- Induction Heating
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Brak w magazynie
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 20.4151 | $ 20.42 |
| 200+ | $ 7.9016 | $ 1580.32 |
| 500+ | $ 7.6239 | $ 3811.95 |
| 1,000+ | $ 7.4865 | $ 7486.50 |
Standardowa Obudowa30/Full Tube | ||
Lepsza cena za większą ilość?
$
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Littelfuse/IXYS | |
| Opak. | TO-247-3 | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 38A | |
| Pd - Power Dissipation | - | |
| RDS(on) | 70mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 250nC | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Littelfuse/IXYS | |
| Opak. | TO-247-3 | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 38A |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | - | |
| RDS(on) | 70mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 250nC | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
Power MOS V® is a new generation of high-voltage N-channel enhancement-mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density, and reduces on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
Funkcje
Tłumaczenie AI
- ISOPLUS247™ package with DCB base
- Electrical isolation from heatsink
- Low coupling capacitance to heatsink for reduced EMI
- High power dissipation
- High temperature cycling capability of die on DCB
- Compatible with JEDEC TO-247AD
- Easy clip mounting
- Fast CoolMOS™ ¹⁾ 3rd generation power MOSFET
- High blocking capability
- Low on-state resistance
- Avalanche rated for unclamped inductive switching (UIS)
- Low thermal resistance due to reduced die thickness
- Enhanced total power density
Zastosowania
Tłumaczenie AI
- Switching Mode Power Supply (SMPS)
- Uninterruptible Power Supply (UPS)
- Power Factor Correction (PFC)
- Welding
- Induction Heating
C3290707 Biblioteka EasyEDA
Jeszcze nie narysowano
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| VBP165R47S | VBsemi Elec | Podobne | TO-247AC | 5 | $5.7485 $6.7629 | ||
| SPW47N60C3 | Infineon | Podobne | TO-247AC-3 | 9,825 | $ 5.9846 | ||
| SPW47N65C3 | Infineon | Podobne | TO-247-3 | 3 | $4.8192 $21.9052 | ||
| FCH47N60-F133 | onsemi | Podobne | TO-247 | 10 | $ 24.9656 | ||
| FCH072N60F | onsemi | Podobne | TO-247 | 98 | $ 4.8535 |