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ST STW75N60DM6

Produttore
ST
Cod. Prod.
STW75N60DM6
Cod. LCSC
C3290704
Imballo
TO-247
Numero Cliente
Attr. chiave
MOSFET N-CH 600V 72A TO-247
Scheda TecnicaST STW75N60DM6
Conformità RoHS1 documenti disponibili
Parti alternative5
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Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ProduttoreST
ImballoTO-247
Output Capacitance(Coss)380pF
Ciss-Input Capacitance4.85nF
Pd - Power Dissipation446W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage600V
Current - Continuous Drain(Id)72A
Reverse Transfer Capacitance (Crss)3.5pF
RDS(on)36mΩ@10V
Number1 N-channel
Gate Charge(Qg)117nC@10V
Vgs±25V
Gate Threshold Voltage (Vgs(th))4.75V
TypeN-Channel
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Descrizione

Traduzione AI

These high-voltage N-channel power MOSFETs belong to the MDmesh DM6 fast-recovery diode series. Compared to the previous-generation MDmesh fast-recovery series, the DM6 combines ultra-low recovery charge (Qrr) and recovery time (trr) with a significant improvement in RDS(ON) per unit area, delivering one of the most efficient switching characteristics on the market — ideal for demanding high-efficiency bridge topologies and zero-voltage switching (ZVS) phase-shifted converters.

Caratteristiche

Traduzione AI
  • Fast recovery body diode
  • Lower RDS(ON) per unit area compared to previous generation
  • Low gate charge, input capacitance and resistance
  • 100% avalanche tested
  • Extremely high dv/dt robustness
  • Zener protection

Applicazioni

Traduzione AI
  • Switching applications