DIODES DMC21D1UDA-7B
| Hersteller | |
| Herst.-Teilenr. | DMC21D1UDA-7B |
| LCSC-Nr. | C3001613 |
| Verp. | X2-DFN0806-6 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH+P-CH ARR 20V 455mA X2-DFN0806-6 |
| Datenblatt | DIODES DMC21D1UDA-7B |
| RoHS-Konformität | 5 Dokumente verfügbar |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Hersteller | DIODES | |
| Verp. | X2-DFN0806-6 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 455mA;328mA | |
| Reverse Transfer Capacitance (Crss) | 2.6pF;2.4pF | |
| RDS(on) | 500mΩ@4.5V;1.2Ω@4.5V | |
| Pd - Power Dissipation | 300mW | |
| Ciss-Input Capacitance | 31pF;28.5pF | |
| Type | N-Channel + P-Channel | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | 410pC@4.5V;400pC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 750mV;700mV | |
| Output Capacitance(Coss) | 3.6pF;3.9pF |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Hersteller | DIODES | |
| Verp. | X2-DFN0806-6 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 455mA;328mA | |
| Reverse Transfer Capacitance (Crss) | 2.6pF;2.4pF | |
| RDS(on) | 500mΩ@4.5V;1.2Ω@4.5V | |
| Pd - Power Dissipation | 300mW |
| Typ | Beschreibung | |
|---|---|---|
| Ciss-Input Capacitance | 31pF;28.5pF | |
| Type | N-Channel + P-Channel | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | 410pC@4.5V;400pC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 750mV;700mV | |
| Output Capacitance(Coss) | 3.6pF;3.9pF |
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Beschreibung
KI-Übersetzung
This MOSFET is designed to minimize on-resistance (RDS(ON)) while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Merkmale
KI-Übersetzung
- Low on-resistance
- Ultra-low gate threshold voltage, 1.0V max
- Low input capacitance
- Fast switching speed
- Ultra-compact SMT package 0.8mm x 0.6mm
- Fully lead-free and RoHS compliant
- Halogen and antimony free. "Green" device
Anwendungen
KI-Übersetzung
- General-purpose interface switch
- Power management function
- Analog switch
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100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Hersteller | DIODES | |
| Verp. | X2-DFN0806-6 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 455mA;328mA | |
| Reverse Transfer Capacitance (Crss) | 2.6pF;2.4pF | |
| RDS(on) | 500mΩ@4.5V;1.2Ω@4.5V | |
| Pd - Power Dissipation | 300mW | |
| Ciss-Input Capacitance | 31pF;28.5pF | |
| Type | N-Channel + P-Channel | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | 410pC@4.5V;400pC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 750mV;700mV | |
| Output Capacitance(Coss) | 3.6pF;3.9pF |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Hersteller | DIODES | |
| Verp. | X2-DFN0806-6 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 455mA;328mA | |
| Reverse Transfer Capacitance (Crss) | 2.6pF;2.4pF | |
| RDS(on) | 500mΩ@4.5V;1.2Ω@4.5V | |
| Pd - Power Dissipation | 300mW |
| Typ | Beschreibung | |
|---|---|---|
| Ciss-Input Capacitance | 31pF;28.5pF | |
| Type | N-Channel + P-Channel | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | 410pC@4.5V;400pC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 750mV;700mV | |
| Output Capacitance(Coss) | 3.6pF;3.9pF |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This MOSFET is designed to minimize on-resistance (RDS(ON)) while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Merkmale
KI-Übersetzung
- Low on-resistance
- Ultra-low gate threshold voltage, 1.0V max
- Low input capacitance
- Fast switching speed
- Ultra-compact SMT package 0.8mm x 0.6mm
- Fully lead-free and RoHS compliant
- Halogen and antimony free. "Green" device
Anwendungen
KI-Übersetzung
- General-purpose interface switch
- Power management function
- Analog switch
C3001613 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



