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MDD(Microdiode Semiconductor) SS2150F
| Produttore | MDD(Microdiode Semiconductor)Asian Brands |
| Cod. Prod. | SS2150F |
| Cod. LCSC | C2994289 |
| Imballo | SMAF |
| Numero Cliente | |
| Attr. chiave | 150V Standalone 950mV@2A 2A SMAF Single Diodes RoHS |
| Scheda Tecnica | MDD(Microdiode Semiconductor) SS2150F |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 3 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Produttore | MDD(Microdiode Semiconductor) | |
| Imballo | SMAF | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 150V | |
| Diode Configuration | Standalone | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 950mV@2A | |
| Reverse Leakage Current (Ir) | 300uA@150V | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Current - Rectified | 2A |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Produttore | MDD(Microdiode Semiconductor) | |
| Imballo | SMAF | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 150V | |
| Diode Configuration | Standalone |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 950mV@2A | |
| Reverse Leakage Current (Ir) | 300uA@150V | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Current - Rectified | 2A |
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Caratteristiche
Traduzione AI
- Plastic package meets UL 94V-0 flammability rating
- Surface mount application
- Metal-silicon junction, majority carrier conduction
- Low power consumption, high efficiency
- Built-in stress relief structure for automated placement
- High forward surge current capability
- Guaranteed high-temperature soldering: leads withstand 260℃/10 seconds
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Produttore | MDD(Microdiode Semiconductor) | |
| Imballo | SMAF | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 150V | |
| Diode Configuration | Standalone | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 950mV@2A | |
| Reverse Leakage Current (Ir) | 300uA@150V | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Current - Rectified | 2A |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Produttore | MDD(Microdiode Semiconductor) | |
| Imballo | SMAF | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 150V | |
| Diode Configuration | Standalone |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 950mV@2A | |
| Reverse Leakage Current (Ir) | 300uA@150V | |
| Non-Repetitive Peak Forward Surge Current | 50A | |
| Current - Rectified | 2A |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Plastic package meets UL 94V-0 flammability rating
- Surface mount application
- Metal-silicon junction, majority carrier conduction
- Low power consumption, high efficiency
- Built-in stress relief structure for automated placement
- High forward surge current capability
- Guaranteed high-temperature soldering: leads withstand 260℃/10 seconds
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |