- 핀아웃
- 풋프린트
ST STGB10H60DF
| 제조업체 | |
| 제조사 품번 | STGB10H60DF |
| LCSC 번호 | C2971195 |
| 포장 | D2PAK |
| 고객 번호 | |
| 주요 제원 | IGBT 600V 20A D2PAK |
| 데이터시트 | ST STGB10H60DF |
| RoHS 준수 | 3개 문서 이용 가능 |
| 대체 부품 | 5 |
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| 제조업체 | ST | |
| 포장 | D2PAK | |
| Td(off) | 103ns | |
| Pd - Power Dissipation | 115W | |
| Td(on) | 19.5ns | |
| Current - Collector(Ic) | 20A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 30pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@250uA | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 1.95V@10A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 107ns | |
| Switching Energy(Eoff) | 140uJ | |
| Turn-On Energy (Eon) | 83uJ | |
| Input Capacitance(Cies) | 1.3nF@25V | |
| Output Capacitance(Coes) | 60pF | |
| Gate Charge(Qg) | 57nC@15V |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| 제조업체 | ST | |
| 포장 | D2PAK | |
| Td(off) | 103ns | |
| Pd - Power Dissipation | 115W | |
| Td(on) | 19.5ns | |
| Current - Collector(Ic) | 20A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 30pF | |
| IGBT Type | FS (Field Stop) |
| 타입 | 설명 | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@250uA | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 1.95V@10A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 107ns | |
| Switching Energy(Eoff) | 140uJ | |
| Turn-On Energy (Eon) | 83uJ | |
| Input Capacitance(Cies) | 1.3nF@25V | |
| Output Capacitance(Coes) | 60pF | |
| Gate Charge(Qg) | 57nC@15V |
개요
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
주요 특징
- High speed switching
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Short-circuit rated
- Ultrafast soft recovery antiparallel diode
응용 분야
- Motor control
- UPS
- PFC
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| 제조업체 | ST | |
| 포장 | D2PAK | |
| Td(off) | 103ns | |
| Pd - Power Dissipation | 115W | |
| Td(on) | 19.5ns | |
| Current - Collector(Ic) | 20A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 30pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@250uA | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 1.95V@10A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 107ns | |
| Switching Energy(Eoff) | 140uJ | |
| Turn-On Energy (Eon) | 83uJ | |
| Input Capacitance(Cies) | 1.3nF@25V | |
| Output Capacitance(Coes) | 60pF | |
| Gate Charge(Qg) | 57nC@15V |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| 제조업체 | ST | |
| 포장 | D2PAK | |
| Td(off) | 103ns | |
| Pd - Power Dissipation | 115W | |
| Td(on) | 19.5ns | |
| Current - Collector(Ic) | 20A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 30pF | |
| IGBT Type | FS (Field Stop) |
| 타입 | 설명 | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@250uA | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 1.95V@10A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 107ns | |
| Switching Energy(Eoff) | 140uJ | |
| Turn-On Energy (Eon) | 83uJ | |
| Input Capacitance(Cies) | 1.3nF@25V | |
| Output Capacitance(Coes) | 60pF | |
| Gate Charge(Qg) | 57nC@15V |
개요
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
주요 특징
- High speed switching
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Short-circuit rated
- Ultrafast soft recovery antiparallel diode
응용 분야
- Motor control
- UPS
- PFC
C2971195 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |