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EDA-ModelleEasyEDA
XIN FEI HONG FH25P03G6
| Hersteller | XIN FEI HONGAsian Brands |
| Herst.-Teilenr. | FH25P03G6 |
| LCSC-Nr. | C2929032 |
| Verp. | PDFN3.3x3.3-8L |
| Kundennummer | |
| Hauptmerkm. | MOSFET P-CH 30V 25A PDFN3.3x3.3-8L |
| Datenblatt | XIN FEI HONG FH25P03G6 |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 4 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | XIN FEI HONG | |
| Verp. | PDFN3.3x3.3-8L | |
| Output Capacitance(Coss) | 209pF | |
| Ciss-Input Capacitance | 1.57nF | |
| Pd - Power Dissipation | 26W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 25A | |
| Reverse Transfer Capacitance (Crss) | 168pF | |
| RDS(on) | 27mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 42.6nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.9V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | XIN FEI HONG | |
| Verp. | PDFN3.3x3.3-8L | |
| Output Capacitance(Coss) | 209pF | |
| Ciss-Input Capacitance | 1.57nF | |
| Pd - Power Dissipation | 26W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 25A | |
| Reverse Transfer Capacitance (Crss) | 168pF | |
| RDS(on) | 27mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 42.6nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.9V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
FH25P03G6 is a high-performance trench P-channel MOSFET with ultra-high cell density, delivering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. FH25P03G6 complies with RoHS standards and green product requirements, with 100% functional reliability qualification to ensure EAS.
Merkmale
KI-Übersetzung
- FH3080K utilizes advanced trench technology and design, delivering excellent on-resistance RDS(ON) with low gate charge.
- Drain-source voltage VDS = 30V, drain current ID = 80A
- RDS(ON) < 6.5mΩ at gate-source voltage VGS = 10V
- RDS(ON) < 10mΩ at gate-source voltage VGS = 5V
Anwendungen
KI-Übersetzung
- High-frequency point-of-load synchronous buck converter for mobile computers (MB), notebooks (NB), ultra-mobile PCs (UMPC), and graphics cards (VGA)
- Networking DC-DC power systems
- Load switches
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | XIN FEI HONG | |
| Verp. | PDFN3.3x3.3-8L | |
| Output Capacitance(Coss) | 209pF | |
| Ciss-Input Capacitance | 1.57nF | |
| Pd - Power Dissipation | 26W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 25A | |
| Reverse Transfer Capacitance (Crss) | 168pF | |
| RDS(on) | 27mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 42.6nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.9V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | XIN FEI HONG | |
| Verp. | PDFN3.3x3.3-8L | |
| Output Capacitance(Coss) | 209pF | |
| Ciss-Input Capacitance | 1.57nF | |
| Pd - Power Dissipation | 26W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 25A | |
| Reverse Transfer Capacitance (Crss) | 168pF | |
| RDS(on) | 27mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 42.6nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.9V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
FH25P03G6 is a high-performance trench P-channel MOSFET with ultra-high cell density, delivering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. FH25P03G6 complies with RoHS standards and green product requirements, with 100% functional reliability qualification to ensure EAS.
Merkmale
KI-Übersetzung
- FH3080K utilizes advanced trench technology and design, delivering excellent on-resistance RDS(ON) with low gate charge.
- Drain-source voltage VDS = 30V, drain current ID = 80A
- RDS(ON) < 6.5mΩ at gate-source voltage VGS = 10V
- RDS(ON) < 10mΩ at gate-source voltage VGS = 5V
Anwendungen
KI-Übersetzung
- High-frequency point-of-load synchronous buck converter for mobile computers (MB), notebooks (NB), ultra-mobile PCs (UMPC), and graphics cards (VGA)
- Networking DC-DC power systems
- Load switches
C2929032 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |