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Zdjęcia poglądowe
Modele EDAEasyEDA
JSMSEMI FQP50N06
| Producent | JSMSEMIAsian Brands |
| Nr części prod. | FQP50N06 |
| Nr LCSC | C2900649 |
| Opak. | TO-220 |
| Numer Klienta | |
| Klucz. cechy | MOSFET 60V 50A TO-220 |
| Karta Katalogowa | JSMSEMI FQP50N06 |
| Zgodność z RoHS | 6 dokumentów dostępnych |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | JSMSEMI | |
| Opak. | TO-220 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 580pF | |
| Current - Continuous Drain(Id) | 50A | |
| Ciss-Input Capacitance | 1.54nF | |
| Pd - Power Dissipation | 120W | |
| Reverse Transfer Capacitance (Crss) | 90pF | |
| RDS(on) | 22mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 41nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | JSMSEMI | |
| Opak. | TO-220 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 580pF | |
| Current - Continuous Drain(Id) | 50A |
| Typ | Opis | |
|---|---|---|
| Ciss-Input Capacitance | 1.54nF | |
| Pd - Power Dissipation | 120W | |
| Reverse Transfer Capacitance (Crss) | 90pF | |
| RDS(on) | 22mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 41nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | JSMSEMI | |
| Opak. | TO-220 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 580pF | |
| Current - Continuous Drain(Id) | 50A | |
| Ciss-Input Capacitance | 1.54nF | |
| Pd - Power Dissipation | 120W | |
| Reverse Transfer Capacitance (Crss) | 90pF | |
| RDS(on) | 22mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 41nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | JSMSEMI | |
| Opak. | TO-220 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 580pF | |
| Current - Continuous Drain(Id) | 50A |
| Typ | Opis | |
|---|---|---|
| Ciss-Input Capacitance | 1.54nF | |
| Pd - Power Dissipation | 120W | |
| Reverse Transfer Capacitance (Crss) | 90pF | |
| RDS(on) | 22mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 41nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
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C2900649 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |