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KIA Semicon Tech KNB2908B

Produttore
KIA Semicon TechAsian Brands
Cod. Prod.
KNB2908B
Cod. LCSC
C2896650
Imballo
TO-263
Numero Cliente
Attr. chiave
MOSFET 80V 130A TO-263
Scheda TecnicaKIA Semicon Tech KNB2908B
Parti alternative5
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Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ProduttoreKIA Semicon Tech
ImballoTO-263
Output Capacitance(Coss)460pF
Ciss-Input Capacitance7.95nF
Pd - Power Dissipation245W
Configuration-
Operating Temperature-55℃~+175℃
Drain to Source Voltage80V
Current - Continuous Drain(Id)130A
Reverse Transfer Capacitance (Crss)380pF
RDS(on)6mΩ@10V
Number1 N-channel
Gate Charge(Qg)160nC@10V
Vgs±20V
Gate Threshold Voltage (Vgs(th))4V
TypeN-Channel
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Descrizione

Traduzione AI

KNX2908B, uses advanced trench technology to provide excellent RDS(ON), Low gate charge,It can be used in a wide variety of applications.

Caratteristiche

Traduzione AI
  • VDS=80V,ID=130A
  • RDS(ON)（typ.)=5.0mΩ @ VGS=10V
  • High density cell design for lower Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation

Applicazioni

Traduzione AI
  • Power switching application
  • Hard switched and High frequency circuits
  • Uninterruptible power supply