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Navitas G3R160MT12J
| Producent | |
| Nr części prod. | G3R160MT12J |
| Nr LCSC | C23513481 |
| Opak. | TO-263-7 |
| Numer Klienta | |
| Klucz. cechy | 1.2kV 12A 69W 192mΩ TO-263-7 Single FETs, MOSFETs |
| Karta Katalogowa | Navitas G3R160MT12J |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Navitas | |
| Opak. | TO-263-7 | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 35pF | |
| Current - Continuous Drain(Id) | 12A | |
| Ciss-Input Capacitance | 493pF | |
| Pd - Power Dissipation | 69W | |
| Reverse Transfer Capacitance (Crss) | 3.1pF | |
| RDS(on) | 192mΩ | |
| Number | - | |
| Gate Charge(Qg) | 25nC | |
| Type | - | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Navitas | |
| Opak. | TO-263-7 | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 35pF | |
| Current - Continuous Drain(Id) | 12A |
| Typ | Opis | |
|---|---|---|
| Ciss-Input Capacitance | 493pF | |
| Pd - Power Dissipation | 69W | |
| Reverse Transfer Capacitance (Crss) | 3.1pF | |
| RDS(on) | 192mΩ | |
| Number | - | |
| Gate Charge(Qg) | 25nC | |
| Type | - | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Navitas | |
| Opak. | TO-263-7 | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 35pF | |
| Current - Continuous Drain(Id) | 12A | |
| Ciss-Input Capacitance | 493pF | |
| Pd - Power Dissipation | 69W | |
| Reverse Transfer Capacitance (Crss) | 3.1pF | |
| RDS(on) | 192mΩ | |
| Number | - | |
| Gate Charge(Qg) | 25nC | |
| Type | - | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Navitas | |
| Opak. | TO-263-7 | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 1.2kV | |
| Output Capacitance(Coss) | 35pF | |
| Current - Continuous Drain(Id) | 12A |
| Typ | Opis | |
|---|---|---|
| Ciss-Input Capacitance | 493pF | |
| Pd - Power Dissipation | 69W | |
| Reverse Transfer Capacitance (Crss) | 3.1pF | |
| RDS(on) | 192mΩ | |
| Number | - | |
| Gate Charge(Qg) | 25nC | |
| Type | - | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
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Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Typ | Szczegóły |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |