OSEN 2SC5200
| Producent | OSENAsian Brands |
| Nr części prod. | 2SC5200 |
| Nr LCSC | C22378645 |
| Opak. | TO-3PL |
| Numer Klienta | |
| Klucz. cechy | NPN/PNP Complementary Silicon Power Transistors |
| Karta Katalogowa | OSEN 2SC5200 |
| Zgodność z RoHS | 1 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | OSEN | |
| Opak. | TO-3PL | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 1uA | |
| Transition frequency(fT) | 10MHz | |
| Collector - Emitter Voltage VCEO | 230V | |
| DC Current Gain | 160 | |
| Emitter-Base Voltage VEBO | 7V | |
| Current - Collector(Ic) | 15A | |
| Pd - Power Dissipation | 150W | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1.2V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | OSEN | |
| Opak. | TO-3PL | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 1uA | |
| Transition frequency(fT) | 10MHz | |
| Collector - Emitter Voltage VCEO | 230V | |
| DC Current Gain | 160 |
| Typ | Opis | |
|---|---|---|
| Emitter-Base Voltage VEBO | 7V | |
| Current - Collector(Ic) | 15A | |
| Pd - Power Dissipation | 150W | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1.2V |
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | OSEN | |
| Opak. | TO-3PL | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 1uA | |
| Transition frequency(fT) | 10MHz | |
| Collector - Emitter Voltage VCEO | 230V | |
| DC Current Gain | 160 | |
| Emitter-Base Voltage VEBO | 7V | |
| Current - Collector(Ic) | 15A | |
| Pd - Power Dissipation | 150W | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1.2V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | OSEN | |
| Opak. | TO-3PL | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 1uA | |
| Transition frequency(fT) | 10MHz | |
| Collector - Emitter Voltage VCEO | 230V | |
| DC Current Gain | 160 |
| Typ | Opis | |
|---|---|---|
| Emitter-Base Voltage VEBO | 7V | |
| Current - Collector(Ic) | 15A | |
| Pd - Power Dissipation | 150W | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1.2V |
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C22378645 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



