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JSMSEMI IXTK110N20L2-JSM

Produttore
JSMSEMIAsian Brands
Cod. Prod.
IXTK110N20L2-JSM
Cod. LCSC
C20616611
Imballo
TO-264
Numero Cliente
Attr. chiave
200V 110A 900W 25mΩ@10V 1 N-channel TO-264 Single FETs, MOSFETs RoHS
Scheda TecnicaJSMSEMI IXTK110N20L2-JSM
Conformità RoHS6 documenti disponibili
Parti alternative4
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Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ProduttoreJSMSEMI
ImballoTO-264
Operating Temperature-55℃~+150℃
Drain to Source Voltage200V
Output Capacitance(Coss)893pF
Current - Continuous Drain(Id)110A
Ciss-Input Capacitance5.784nF
Pd - Power Dissipation900W
Reverse Transfer Capacitance (Crss)561pF
RDS(on)25mΩ@10V
Number1 N-channel
Gate Charge(Qg)367nC@10V
Gate Threshold Voltage (Vgs(th))4V
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Descrizione

Traduzione AI

The HCJU30P10 utilizes advanced trench technology to achieve excellent RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.

Caratteristiche

Traduzione AI
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Applicazioni

Traduzione AI
  • Switching Mode Power Supply (SMPS)
  • Uninterruptible Power Supply (UPS)
  • Power Factor Correction (PFC)