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Wuxi China Resources Huajing Microelectronics 3DD13003E1D
| Produttore | Wuxi China Resources Huajing MicroelectronicsAsian Brands |
| Cod. Prod. | 3DD13003E1D |
| Cod. LCSC | C162349 |
| Imballo | TO-92 |
| Numero Cliente | |
| Attr. chiave | TRANS NPN 400V 1.3A TO-92 |
| Scheda Tecnica | Wuxi China Resources Huajing Microelectronics 3DD13003E1D |
| Parti alternative | 2 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Produttore | Wuxi China Resources Huajing Microelectronics | |
| Imballo | TO-92 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 100uA | |
| Transition frequency(fT) | 5MHz | |
| Collector - Emitter Voltage VCEO | 400V | |
| DC Current Gain | 15 | |
| Pd - Power Dissipation | 800mW | |
| Current - Collector(Ic) | 1.3A | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 800mV |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Produttore | Wuxi China Resources Huajing Microelectronics | |
| Imballo | TO-92 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 100uA | |
| Transition frequency(fT) | 5MHz | |
| Collector - Emitter Voltage VCEO | 400V |
| Tipo | Descrizione | |
|---|---|---|
| DC Current Gain | 15 | |
| Pd - Power Dissipation | 800mW | |
| Current - Collector(Ic) | 1.3A | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 800mV |
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Produttore | Wuxi China Resources Huajing Microelectronics | |
| Imballo | TO-92 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 100uA | |
| Transition frequency(fT) | 5MHz | |
| Collector - Emitter Voltage VCEO | 400V | |
| DC Current Gain | 15 | |
| Pd - Power Dissipation | 800mW | |
| Current - Collector(Ic) | 1.3A | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 800mV |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Produttore | Wuxi China Resources Huajing Microelectronics | |
| Imballo | TO-92 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 100uA | |
| Transition frequency(fT) | 5MHz | |
| Collector - Emitter Voltage VCEO | 400V |
| Tipo | Descrizione | |
|---|---|---|
| DC Current Gain | 15 | |
| Pd - Power Dissipation | 800mW | |
| Current - Collector(Ic) | 1.3A | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 800mV |
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C162349 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Tipo | Dettagli |
|---|---|
| ECCN | |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |