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Zdjęcia poglądowe
Modele EDAEasyEDA
onsemi FDC6401N
| Producent | |
| Nr części prod. | FDC6401N |
| Nr LCSC | C154559 |
| Opak. | SuperSOT-6 |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH ARR 20V 3A SuperSOT-6 |
| Karta Katalogowa | onsemi FDC6401N |
| Zgodność z RoHS | 4 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Producent | onsemi | |
| Opak. | SuperSOT-6 | |
| Reverse Transfer Capacitance (Crss) | 42pF | |
| Ciss-Input Capacitance | 324pF | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 82pF | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3A | |
| RDS(on) | 95mΩ@2.5V | |
| Pd - Power Dissipation | 960mW | |
| Type | N-Channel | |
| Configuration | - | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 3.3nC@4.5V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Producent | onsemi | |
| Opak. | SuperSOT-6 | |
| Reverse Transfer Capacitance (Crss) | 42pF | |
| Ciss-Input Capacitance | 324pF | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 82pF | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3A |
| Typ | Opis | |
|---|---|---|
| RDS(on) | 95mΩ@2.5V | |
| Pd - Power Dissipation | 960mW | |
| Type | N-Channel | |
| Configuration | - | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 3.3nC@4.5V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Funkcje
Tłumaczenie AI
- 3.0 A, 20 V
- RDS(ON) = 70 mΩ @ VGS = 4.5 V
- RDS(ON) = 95 mΩ @ VGS = 2.5 V
- Low gate charge (3.3 nC)
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
Zastosowania
Tłumaczenie AI
- DC/DC converter
- Battery Protection
- Power Management
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Na stanie: 2,985
2,985 W magazynie, wysyłka natychmiastowa
Minimum: 5Wielokrotność: 5Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 5+ | $ 0.3645 | $ 1.82 |
| 50+ | $ 0.2834 | $ 14.17 |
| 150+ | $ 0.2486 | $ 37.29 |
| 500+ | $ 0.2053 | $ 102.65 |
| 3,000+ | $ 0.186 | $ 558.00 |
| 6,000+ | $ 0.1744 | $ 1046.40 |
Standardowa Obudowa3000/Full Reel | ||
Lepsza cena za większą ilość?
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Producent | onsemi | |
| Opak. | SuperSOT-6 | |
| Reverse Transfer Capacitance (Crss) | 42pF | |
| Ciss-Input Capacitance | 324pF | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 82pF | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3A | |
| RDS(on) | 95mΩ@2.5V | |
| Pd - Power Dissipation | 960mW | |
| Type | N-Channel | |
| Configuration | - | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 3.3nC@4.5V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Producent | onsemi | |
| Opak. | SuperSOT-6 | |
| Reverse Transfer Capacitance (Crss) | 42pF | |
| Ciss-Input Capacitance | 324pF | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 82pF | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3A |
| Typ | Opis | |
|---|---|---|
| RDS(on) | 95mΩ@2.5V | |
| Pd - Power Dissipation | 960mW | |
| Type | N-Channel | |
| Configuration | - | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 3.3nC@4.5V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Funkcje
Tłumaczenie AI
- 3.0 A, 20 V
- RDS(ON) = 70 mΩ @ VGS = 4.5 V
- RDS(ON) = 95 mΩ @ VGS = 2.5 V
- Low gate charge (3.3 nC)
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
Zastosowania
Tłumaczenie AI
- DC/DC converter
- Battery Protection
- Power Management
C154559 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| NTGD3148NT1G | onsemi | Podobne | TSOP-6 | 2,832 | $ 0.4861 | ||
| SP2302DTS | Siliup | Podobne | SOT-23-6L | 470 | $0.0579 $0.0681 | ||
| VB3222 | VBsemi Elec | Podobne | TSOP-6 | 35 | $0.1893 $0.2227 | ||
| HL6802 | R+O | Podobne | SOT-23-6L | 32,780 | $ 0.0629 | ||
| VBZB8205A | VBsemi Elec | Podobne | TSOP-6 | 30 | $0.1223 $0.1438 |