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KIA Semicon Tech KIA65R300FS
| Producent | KIA Semicon TechAsian Brands |
| Nr części prod. | KIA65R300FS |
| Nr LCSC | C135553 |
| Opak. | TO-220F-3 |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 650V 15A TO-220F-3 |
| Karta Katalogowa | KIA Semicon Tech KIA65R300FS |
| Części alternatywne | 2 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | KIA Semicon Tech | |
| Opak. | TO-220F-3 | |
| Output Capacitance(Coss) | 180pF | |
| Ciss-Input Capacitance | 800pF | |
| Pd - Power Dissipation | 34W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 15A | |
| Reverse Transfer Capacitance (Crss) | 8pF | |
| RDS(on) | 300mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 43nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | KIA Semicon Tech | |
| Opak. | TO-220F-3 | |
| Output Capacitance(Coss) | 180pF | |
| Ciss-Input Capacitance | 800pF | |
| Pd - Power Dissipation | 34W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 15A | |
| Reverse Transfer Capacitance (Crss) | 8pF | |
| RDS(on) | 300mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 43nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This Power MOSFET is produced using KIA semi`s advanced super-junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency.
Funkcje
Tłumaczenie AI
- RDS(on)=0.27Ω @ VGS=10V
- Low gate charge ( typical 43nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Na stanie: 4
4 W magazynie, wysyłka natychmiastowa
Wycofany
Po wyczerpaniu zapasów produkt zostanie oznaczony jako „Niedostępny”.
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 1.0834 | $ 1.08 |
| 10+ | $ 0.9089 | $ 9.09 |
| 50+ | $ 0.7155 | $ 35.78 |
| 100+ | $ 0.607 | $ 60.70 |
| 500+ | $ 0.5582 | $ 279.10 |
| 1,000+ | $ 0.5362 | $ 536.20 |
Standardowa Obudowa50/Full Tube | ||
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | KIA Semicon Tech | |
| Opak. | TO-220F-3 | |
| Output Capacitance(Coss) | 180pF | |
| Ciss-Input Capacitance | 800pF | |
| Pd - Power Dissipation | 34W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 15A | |
| Reverse Transfer Capacitance (Crss) | 8pF | |
| RDS(on) | 300mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 43nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | KIA Semicon Tech | |
| Opak. | TO-220F-3 | |
| Output Capacitance(Coss) | 180pF | |
| Ciss-Input Capacitance | 800pF | |
| Pd - Power Dissipation | 34W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 15A | |
| Reverse Transfer Capacitance (Crss) | 8pF | |
| RDS(on) | 300mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 43nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This Power MOSFET is produced using KIA semi`s advanced super-junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency.
Funkcje
Tłumaczenie AI
- RDS(on)=0.27Ω @ VGS=10V
- Low gate charge ( typical 43nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
C135553 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |