onsemi 2N4401TA

제품 사양

전체

타입	설명
카테고리	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
제조업체	onsemi
포장	TO-92-3L
Operating Temperature	-55℃~+150℃
Current - Collector Cutoff	100nA
Transition frequency(fT)	250MHz
Collector - Emitter Voltage VCEO	40V
Emitter-Base Voltage VEBO	6V
DC Current Gain	80
Current - Collector(Ic)	600mA
Pd - Power Dissipation	625mW
Configuration	Standalone
Number	1 NPN
type	NPN
Vce Saturation(VCE(sat))	400mV

타입	설명
카테고리	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
제조업체	onsemi
포장	TO-92-3L
Operating Temperature	-55℃~+150℃
Current - Collector Cutoff	100nA
Transition frequency(fT)	250MHz
Collector - Emitter Voltage VCEO	40V
Emitter-Base Voltage VEBO	6V

AI 번역

This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA.

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100% 정품 · 30일 반품 또는 교환

전체

타입	설명
카테고리	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
제조업체	onsemi
포장	TO-92-3L
Operating Temperature	-55℃~+150℃
Current - Collector Cutoff	100nA
Transition frequency(fT)	250MHz
Collector - Emitter Voltage VCEO	40V
Emitter-Base Voltage VEBO	6V
DC Current Gain	80
Current - Collector(Ic)	600mA
Pd - Power Dissipation	625mW
Configuration	Standalone
Number	1 NPN
type	NPN
Vce Saturation(VCE(sat))	400mV

타입	설명
카테고리	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
제조업체	onsemi
포장	TO-92-3L
Operating Temperature	-55℃~+150℃
Current - Collector Cutoff	100nA
Transition frequency(fT)	250MHz
Collector - Emitter Voltage VCEO	40V
Emitter-Base Voltage VEBO	6V

AI 번역

This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA.