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EDA-ModelleEasyEDA
NCE NCE3090K
| Hersteller | NCEAsian Brands |
| Herst.-Teilenr. | NCE3090K |
| LCSC-Nr. | C108640 |
| Verp. | TO-252-2L |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 38V 90A TO-252-2L |
| Datenblatt | NCE NCE3090K |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NCE | |
| Verp. | TO-252-2L | |
| Output Capacitance(Coss) | 360pF | |
| Ciss-Input Capacitance | 3.433nF | |
| Pd - Power Dissipation | 105W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 38V | |
| Current - Continuous Drain(Id) | 90A | |
| Reverse Transfer Capacitance (Crss) | 287pF | |
| RDS(on) | 8mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 60nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NCE | |
| Verp. | TO-252-2L | |
| Output Capacitance(Coss) | 360pF | |
| Ciss-Input Capacitance | 3.433nF | |
| Pd - Power Dissipation | 105W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 38V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 90A | |
| Reverse Transfer Capacitance (Crss) | 287pF | |
| RDS(on) | 8mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 60nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
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Beschreibung
KI-Übersetzung
NCE3090K utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.
Merkmale
KI-Übersetzung
- VDS = 30V, ID = 90A
- RDS(ON) = 4.1 mΩ (typ.) @ VGS = 10V
- RDS(ON) = 5.9 mΩ (typ.) @ VGS = 4.5V
- High-density cell design for ultra-low RDS(ON)
- Fully characterized avalanche voltage and current ratings
- Excellent stability and consistency under high EAS
- Superior package with good thermal dissipation
- High ESD capability enabled by special process technology
Anwendungen
KI-Übersetzung
- DC/DC Converter - Synchronous Rectifier
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 1,470
1,470 Ab Lager, sofort versandfertig
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.1617 | $ 0.81 |
| 50+ | $ 0.1251 | $ 6.26 |
| 150+ | $ 0.1067 | $ 16.01 |
| 500+ | $ 0.093 | $ 46.50 |
| 2,500+ | $ 0.082 | $ 205.00 |
| 5,000+ | $ 0.0764 | $ 382.00 |
Standardgehäuse2500/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NCE | |
| Verp. | TO-252-2L | |
| Output Capacitance(Coss) | 360pF | |
| Ciss-Input Capacitance | 3.433nF | |
| Pd - Power Dissipation | 105W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 38V | |
| Current - Continuous Drain(Id) | 90A | |
| Reverse Transfer Capacitance (Crss) | 287pF | |
| RDS(on) | 8mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 60nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NCE | |
| Verp. | TO-252-2L | |
| Output Capacitance(Coss) | 360pF | |
| Ciss-Input Capacitance | 3.433nF | |
| Pd - Power Dissipation | 105W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 38V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 90A | |
| Reverse Transfer Capacitance (Crss) | 287pF | |
| RDS(on) | 8mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 60nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
NCE3090K utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.
Merkmale
KI-Übersetzung
- VDS = 30V, ID = 90A
- RDS(ON) = 4.1 mΩ (typ.) @ VGS = 10V
- RDS(ON) = 5.9 mΩ (typ.) @ VGS = 4.5V
- High-density cell design for ultra-low RDS(ON)
- Fully characterized avalanche voltage and current ratings
- Excellent stability and consistency under high EAS
- Superior package with good thermal dissipation
- High ESD capability enabled by special process technology
Anwendungen
KI-Übersetzung
- DC/DC Converter - Synchronous Rectifier
C108640 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| NCE40H12K | NCE | Ähnliche | TO-252-2L | 1,825 | $ 0.4826 | ||
| NCE8295AK | NCE | Ähnliche | TO-252-2L | 10,349 | $ 0.7432 | ||
| NCEP60T12AK | NCE | Ähnliche | TO-252-2L | 4,380 | $ 1.0868 | ||
| NCE6990K | NCE | Ähnliche | TO-252-2L | 339 | $ 0.4343 | ||
| NCE60H10K | NCE | Ähnliche | TO-252-2L | 3,809 | $ 0.5666 |