DIODES BCX5616QTA

제품 사양

전체

타입	설명
카테고리	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
제조업체	DIODES
포장	SOT-89
Operating Temperature	-65℃~+150℃
Current - Collector Cutoff	100nA
Transition frequency(fT)	150MHz
Collector - Emitter Voltage VCEO	80V
Emitter-Base Voltage VEBO	6V
DC Current Gain	100
Pd - Power Dissipation	1.5W
Current - Collector(Ic)	1A
Configuration	Standalone
Number	1 NPN
type	NPN
Vce Saturation(VCE(sat))	500mV

타입	설명
카테고리	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
제조업체	DIODES
포장	SOT-89
Operating Temperature	-65℃~+150℃
Current - Collector Cutoff	100nA
Transition frequency(fT)	150MHz
Collector - Emitter Voltage VCEO	80V
Emitter-Base Voltage VEBO	6V

AI 번역

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

AI 번역

BVCEO > 80 V
Ic = 1 A High Continuous Collector Current
ICM = 2.0 A Peak Pulse Current
Low Saturation Voltage VCE(sat) < 500 mV @ 0.5A
Epitaxial Planar Die Construction
Complementary PNP types: BCX5316Q
Totally Lead-Free & Fully RoHS Compliant
Halogen- and Antimony-Free. "Green" Device
The BCX5616Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities.

품절

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최소값: 5배수: 5판매 단위: Piece

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전체

타입	설명
카테고리	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
제조업체	DIODES
포장	SOT-89
Operating Temperature	-65℃~+150℃
Current - Collector Cutoff	100nA
Transition frequency(fT)	150MHz
Collector - Emitter Voltage VCEO	80V
Emitter-Base Voltage VEBO	6V
DC Current Gain	100
Pd - Power Dissipation	1.5W
Current - Collector(Ic)	1A
Configuration	Standalone
Number	1 NPN
type	NPN
Vce Saturation(VCE(sat))	500mV

타입	설명
카테고리	Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
제조업체	DIODES
포장	SOT-89
Operating Temperature	-65℃~+150℃
Current - Collector Cutoff	100nA
Transition frequency(fT)	150MHz
Collector - Emitter Voltage VCEO	80V
Emitter-Base Voltage VEBO	6V

AI 번역

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

AI 번역

BVCEO > 80 V
Ic = 1 A High Continuous Collector Current
ICM = 2.0 A Peak Pulse Current
Low Saturation Voltage VCE(sat) < 500 mV @ 0.5A
Epitaxial Planar Die Construction
Complementary PNP types: BCX5316Q
Totally Lead-Free & Fully RoHS Compliant
Halogen- and Antimony-Free. "Green" Device
The BCX5616Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities.

MPN	제조사	포장	재고 현황	단가
BCX56-16-AU_R1_000A1	PANJIT	SOT-89	45	$ 0.1326
PBHV8115X,115	Nexperia	SOT-89	1	$ 0.4428
2SC3647T-TD-E	onsemi	SOT-89-3	41	$ 0.6195
BCX56-16	TECH PUBLIC	SOT-89	280	$ 0.0632
FCX493	PJSEMI	SOT-89	260	$ 0.073
BCX56-16TF	Nexperia	SOT-89-3	12,150	$ 0.1253
BCX5616QTC	DIODES	SOT-89	0	$ 0.1068
ZXTN10150DZTA	DIODES	SOT-89-3L	0	$ 0.3933
BCX56-16-AU_000A1	PANJIT	SOT-89	0	$ 0.1181
BCX56-16	KEXIN	SOT-89	0	$ 0.0744