PANJIT PJP35N06A_T0_00001
| Produttore | PANJITAsian Brands |
| Cod. Prod. | PJP35N06A_T0_00001 |
| Cod. LCSC | C6628480 |
| Imballo | TO-220AB |
| Numero Cliente | |
| Attr. chiave | 60V 104W 21mΩ 1 N-channel TO-220AB Single FETs, MOSFETs RoHS |
| Scheda Tecnica | PANJIT PJP35N06A_T0_00001 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | PANJIT | |
| Imballo | TO-220AB | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | - | |
| Ciss-Input Capacitance | 1.68nF | |
| Pd - Power Dissipation | 104W | |
| Reverse Transfer Capacitance (Crss) | 85pF | |
| RDS(on) | 21mΩ | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 28nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | PANJIT | |
| Imballo | TO-220AB | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | - |
| Tipo | Descrizione | |
|---|---|---|
| Ciss-Input Capacitance | 1.68nF | |
| Pd - Power Dissipation | 104W | |
| Reverse Transfer Capacitance (Crss) | 85pF | |
| RDS(on) | 21mΩ | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 28nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- RDS(ON) < 21 mΩ at VGS = 10 V, ID = 20 A
- RDS(ON) < 24 mΩ at VGS = 4.5 V, ID = 12 A
- Fast switching speed
- Improved dv/dt capability
- Low reverse transfer capacitance
- Lead-free, RoHS 2.0 compliant
- Green molding compound per IEC 61249
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | PANJIT | |
| Imballo | TO-220AB | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | - | |
| Ciss-Input Capacitance | 1.68nF | |
| Pd - Power Dissipation | 104W | |
| Reverse Transfer Capacitance (Crss) | 85pF | |
| RDS(on) | 21mΩ | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 28nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | PANJIT | |
| Imballo | TO-220AB | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | - |
| Tipo | Descrizione | |
|---|---|---|
| Ciss-Input Capacitance | 1.68nF | |
| Pd - Power Dissipation | 104W | |
| Reverse Transfer Capacitance (Crss) | 85pF | |
| RDS(on) | 21mΩ | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 28nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- RDS(ON) < 21 mΩ at VGS = 10 V, ID = 20 A
- RDS(ON) < 24 mΩ at VGS = 4.5 V, ID = 12 A
- Fast switching speed
- Improved dv/dt capability
- Low reverse transfer capacitance
- Lead-free, RoHS 2.0 compliant
- Green molding compound per IEC 61249
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

