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HXY MOSFET AOSP36326C product image
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HXY MOSFET AOSP36326C

Hersteller
HXY MOSFETAsian Brands
Herst.-Teilenr.
AOSP36326C
LCSC-Nr.
C54582795
Verp.
SOP-8
Kundennummer
Hauptmerkm.
30V 10A 2.2W 9mΩ@10V 1 N-channel N-Channel SOP-8 Single FETs, MOSFETs
DatenblattHXY MOSFET AOSP36326C
Alternativteile5
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Produktspezifikationen

Alle
TypBeschreibung
KategorieDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
HerstellerHXY MOSFET
Verp.SOP-8
ConfigurationStandalone
Drain to Source Voltage30V
Output Capacitance(Coss)110pF
Current - Continuous Drain(Id)10A
Ciss-Input Capacitance580pF
Pd - Power Dissipation2.2W
Reverse Transfer Capacitance (Crss)94pF
RDS(on)9mΩ@10V
Number1 N-channel
Gate Charge(Qg)8nC@4.5V
Gate Threshold Voltage (Vgs(th))1.4V
TypeN-Channel
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Beschreibung

KI-Übersetzung

AOSP36326C utilizes advanced trench technology to deliver excellent on-resistance (RDS(ON)), low gate charge, and operation down to 4.5V gate voltage. The device is suitable for battery protection or other switching applications.

Merkmale

KI-Übersetzung
  • Drain-source voltage VDS = 30V, drain current ID = 10A
  • On-resistance RDS(ON) < 12mΩ at gate-source voltage VGS = 10V

Anwendungen

KI-Übersetzung
  • Battery protection
  • Load switch
  • Uninterruptible power supply
  • SOP-8 package
  • N-channel MOSFET