HXY MOSFET FDMC8296-HXY
| Produttore | HXY MOSFETAsian Brands |
| Cod. Prod. | FDMC8296-HXY |
| Cod. LCSC | C53263291 |
| Imballo | DFN-8L(3x3) |
| Numero Cliente | |
| Attr. chiave | 37.5W 30V 35A 7.5mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs |
| Scheda Tecnica | HXY MOSFET FDMC8296-HXY |
| Parti alternative | 5 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | HXY MOSFET | |
| Imballo | DFN-8L(3x3) | |
| Output Capacitance(Coss) | 131pF | |
| Ciss-Input Capacitance | 940pF | |
| Pd - Power Dissipation | 37.5W | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 35A | |
| Reverse Transfer Capacitance (Crss) | 109pF | |
| RDS(on) | 7.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 9.8nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | HXY MOSFET | |
| Imballo | DFN-8L(3x3) | |
| Output Capacitance(Coss) | 131pF | |
| Ciss-Input Capacitance | 940pF | |
| Pd - Power Dissipation | 37.5W | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 35A | |
| Reverse Transfer Capacitance (Crss) | 109pF | |
| RDS(on) | 7.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 9.8nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | HXY MOSFET | |
| Imballo | DFN-8L(3x3) | |
| Output Capacitance(Coss) | 131pF | |
| Ciss-Input Capacitance | 940pF | |
| Pd - Power Dissipation | 37.5W | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 35A | |
| Reverse Transfer Capacitance (Crss) | 109pF | |
| RDS(on) | 7.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 9.8nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | HXY MOSFET | |
| Imballo | DFN-8L(3x3) | |
| Output Capacitance(Coss) | 131pF | |
| Ciss-Input Capacitance | 940pF | |
| Pd - Power Dissipation | 37.5W | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 35A | |
| Reverse Transfer Capacitance (Crss) | 109pF | |
| RDS(on) | 7.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 9.8nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
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C53263291 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



