Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | MDM | |
| Verp. | SMA | |
| Reverse Recovery Time (trr) | 35ns | |
| Voltage - DC Reverse (Vr) (Max) | 200V | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 950mV | |
| Reverse Leakage Current (Ir) | 5uA | |
| Current - Rectified | 1A | |
| Non-Repetitive Peak Forward Surge Current | - |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | MDM | |
| Verp. | SMA | |
| Reverse Recovery Time (trr) | 35ns | |
| Voltage - DC Reverse (Vr) (Max) | 200V | |
| Diode Configuration | 1 Independent |
| Typ | Beschreibung | |
|---|---|---|
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 950mV | |
| Reverse Leakage Current (Ir) | 5uA | |
| Current - Rectified | 1A | |
| Non-Repetitive Peak Forward Surge Current | - |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Surface mount application
- Low-profile package
- Glass passivated chip junction
- Ultra-fast reverse recovery time
- Lead-free product compliant with EU RoHS Directive 2011/65/EU
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | MDM | |
| Verp. | SMA | |
| Reverse Recovery Time (trr) | 35ns | |
| Voltage - DC Reverse (Vr) (Max) | 200V | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 950mV | |
| Reverse Leakage Current (Ir) | 5uA | |
| Current - Rectified | 1A | |
| Non-Repetitive Peak Forward Surge Current | - |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | MDM | |
| Verp. | SMA | |
| Reverse Recovery Time (trr) | 35ns | |
| Voltage - DC Reverse (Vr) (Max) | 200V | |
| Diode Configuration | 1 Independent |
| Typ | Beschreibung | |
|---|---|---|
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 950mV | |
| Reverse Leakage Current (Ir) | 5uA | |
| Current - Rectified | 1A | |
| Non-Repetitive Peak Forward Surge Current | - |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Surface mount application
- Low-profile package
- Glass passivated chip junction
- Ultra-fast reverse recovery time
- Lead-free product compliant with EU RoHS Directive 2011/65/EU
C53222255 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |



