VBsemi Elec BUK7215-55A,118-VB
| Produttore | VBsemi ElecAsian Brands |
| Cod. Prod. | BUK7215-55A,118-VB |
| Cod. LCSC | C52209168 |
| Imballo | TO-252 |
| Numero Cliente | |
| Attr. chiave | 136W 60V 97A 5mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs |
| Scheda Tecnica | VBsemi Elec BUK7215-55A,118-VB |
| Parti alternative | 5 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VBsemi Elec | |
| Imballo | TO-252 | |
| Output Capacitance(Coss) | 441pF | |
| Ciss-Input Capacitance | 4.844nF | |
| Pd - Power Dissipation | 136W | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - | |
| Current - Continuous Drain(Id) | 97A | |
| Reverse Transfer Capacitance (Crss) | 200pF | |
| RDS(on) | 5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 82nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VBsemi Elec | |
| Imballo | TO-252 | |
| Output Capacitance(Coss) | 441pF | |
| Ciss-Input Capacitance | 4.844nF | |
| Pd - Power Dissipation | 136W | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 97A | |
| Reverse Transfer Capacitance (Crss) | 200pF | |
| RDS(on) | 5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 82nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
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Caratteristiche
Traduzione AI
- Trench power MOSFET
- Low thermal resistance package
- 100% Rg and UIS tested
- RoHS compliant
- Halogen-free
Garanzia su ogni ordine
100% Autentico · Reso o Sostituzione entro 30 Giorni
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VBsemi Elec | |
| Imballo | TO-252 | |
| Output Capacitance(Coss) | 441pF | |
| Ciss-Input Capacitance | 4.844nF | |
| Pd - Power Dissipation | 136W | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - | |
| Current - Continuous Drain(Id) | 97A | |
| Reverse Transfer Capacitance (Crss) | 200pF | |
| RDS(on) | 5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 82nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VBsemi Elec | |
| Imballo | TO-252 | |
| Output Capacitance(Coss) | 441pF | |
| Ciss-Input Capacitance | 4.844nF | |
| Pd - Power Dissipation | 136W | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 97A | |
| Reverse Transfer Capacitance (Crss) | 200pF | |
| RDS(on) | 5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 82nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Trench power MOSFET
- Low thermal resistance package
- 100% Rg and UIS tested
- RoHS compliant
- Halogen-free
C52209168 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

