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HUAYI HYG032N08NS1B6
| Producent | HUAYIAsian Brands |
| Nr części prod. | HYG032N08NS1B6 |
| Nr LCSC | C5121304 |
| Opak. | TO-263-6L |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 80V 200A TO-263-6L |
| Karta Katalogowa | HUAYI HYG032N08NS1B6 |
| Zgodność z RoHS | 1 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HUAYI | |
| Opak. | TO-263-6L | |
| Drain to Source Voltage | 80V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 200A | |
| Ciss-Input Capacitance | 7.714nF | |
| Pd - Power Dissipation | 250W | |
| Reverse Transfer Capacitance (Crss) | 176pF | |
| RDS(on) | 2.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 120nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HUAYI | |
| Opak. | TO-263-6L | |
| Drain to Source Voltage | 80V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 200A | |
| Ciss-Input Capacitance | 7.714nF |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 250W | |
| Reverse Transfer Capacitance (Crss) | 176pF | |
| RDS(on) | 2.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 120nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- 80V/200A
- RDS(ON)=2.5 mΩ(typ.)@VGS=10V
- 100% Avalanche Tested
- Reliable and Rugged
- Halogen-Free and Green Devices Available (RoHS Compliant)
Zastosowania
Tłumaczenie AI
- Motor control
- Power management for inverter systems
- Battery Operated Tools
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HUAYI | |
| Opak. | TO-263-6L | |
| Drain to Source Voltage | 80V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 200A | |
| Ciss-Input Capacitance | 7.714nF | |
| Pd - Power Dissipation | 250W | |
| Reverse Transfer Capacitance (Crss) | 176pF | |
| RDS(on) | 2.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 120nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HUAYI | |
| Opak. | TO-263-6L | |
| Drain to Source Voltage | 80V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 200A | |
| Ciss-Input Capacitance | 7.714nF |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 250W | |
| Reverse Transfer Capacitance (Crss) | 176pF | |
| RDS(on) | 2.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 120nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- 80V/200A
- RDS(ON)=2.5 mΩ(typ.)@VGS=10V
- 100% Avalanche Tested
- Reliable and Rugged
- Halogen-Free and Green Devices Available (RoHS Compliant)
Zastosowania
Tłumaczenie AI
- Motor control
- Power management for inverter systems
- Battery Operated Tools
C5121304 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |